Optical, structural and electrical properties of Mn doped tin oxide thin films

Brahma, R.; Krishna, M. Ghanashyam; Bhatnagar, Anil K.

doi:10.1007/bf02706503

Cited by 22 publications

(10 citation statements)

References 21 publications

(24 reference statements)

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“…SnO 2 based systems, in particular, have been the focus of many of these investigations worldwide because it is a naturally nonstoichiometric prototypical transparent semiconducting oxide having rutile structure [5]. It has a high band gap of ∼4 eV and when suitably doped, can be used both as a p-type and n-type semiconductor [6].…”

Section: Introductionmentioning

confidence: 99%

Dielectric Properties of SnO₂ Thin Film Using SPR Technique for Gas Sensing Applications

Paliwal

Sharma

Tomar

et al. 2014

Conference Papers in Science

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Focus has been made on the determination of dielectric constant of thin dielectric layer (SnO 2 thin film) using surface plasmon resonance (SPR) technique and exploiting it for the detection of NH 3 gas. SnO 2 thin film has been deposited by rf-sputtering technique on gold coated glass prism (BK-7) and its SPR response was measured in the Kretschmann configuration of attenuated total reflection using a p-polarised light beam at 633 nm wavelength. The SPR response of bilayer film was fitted with Fresnel's equations in order to calculate the dielectric constant of SnO 2 thin film. The air/SnO 2 /Au/prim system has been utilized for detecting varying concentration (500 ppm to 2000 ppm) of NH 3 gas at room temperature using SPR technique. SPR curve shows significant shift in resonance angle from 44.8 ∘ to 56.7 ∘ on exposure of fixed concentration of NH 3 gas (500 ppm to 2000 ppm) with very fast response and recovery speeds.

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Section: Introductionmentioning

confidence: 99%

Dielectric Properties of SnO₂ Thin Film Using SPR Technique for Gas Sensing Applications

Paliwal

Sharma

Tomar

et al. 2014

Conference Papers in Science

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“…19 This strong emission was attributed to the transition from the conduction band to deeper levels of SnO 2 caused by oxygen vacancies that acted as luminescence centers. [20][21][22] Another study demonstrated that the 600-nm peak resulted from oxygen vacancies, and the 490-nm band resulted from oxygen interstitial or intrinsic surface states. 23 Based on those results, it is likely that the 596-nm peak in the present study decreased after N 2 plasma treatment due to a change in the oxygen vacancies.…”

Section: Resultsmentioning

confidence: 98%

Surface Modification of Oxide Nanowires by Nitrogen Plasma

Lim

Lee

Suh

et al. 2011

Electrochem. Solid-State Lett.

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The amount of oxygen vacancies on the surface of SnO 2 nanowires was controlled by N 2 plasma. Nitrogen ions in N 2 plasma were substituted for oxygen vacancies (V o ) on the nanowire surface, reducing the amount of oxygen vacancies. Photoluminescence spectra showed that the V o -related peak around 600 nm decreased dramatically after N 2 plasma and increased again after ultravioletozone (UVO) treatment. The threshold voltage (V th ) of the SnO 2 nanowire transistors exhibited a þ1.8 V positive shift after N 2 plasma, and the V th of the N 2 plasma-treated nanowire transistors shifted toward the negative direction (À0.76 V) again after UVO.Oxide nanowires are applied in various fields including nanoscale electronics, next-generation displays, photovoltaic devices, and gas/solar sensors due to their outstanding characteristics such as wide-energy band gaps, nano-scale integration, optical transparency, mechanical flexibility, low voltage operation, and high mobility. [1][2][3][4] Most notably, studies are currently focusing on oxide nanowires applied to commercial electronic circuits and, in particular, integrated transistor circuits. 5-7 For such applications, it is crucial to effectively control the transistor characteristics of the oxide nanowires to meet required specifications of integrated transistor circuits. Therefore, nanowire characteristics should be controlled and monitored continuously through a device optimization process. In related studies, various methods, such as optimizing the growth conditions of nanowires, doping nanowires with various materials, and controlling characteristics through post-treatments after producing nanowire devices, are being applied. 8-10 Among these methods, post-treatments are relatively simple, easy to control, and ensure reproducibility. Various attempts have recently been made to control characteristics through post-treatment of the nanowire surface using thermal annealing, H 2 , O 2 , Ar plasma, and ozone treatment. In an oxygen atmosphere, the field emission of ZnO was enhanced through thermal annealing. 11 ZnO nanowire treated by Ar or H 2 plasma showed improved conductivity. 12,13 In addition, surface treatment using ultraviolet (UV) radiation enabled temporary interface treatment. 14 However, these attempts were only applied to the observation of nanowire properties after the posttreatment, not to the fine control of the characteristics of nanowire devices.In this study, N 2 plasma was used to control the characteristics of SnO 2 nanowire transistors (NWTs) by controlling the characteristics of the SnO 2 nanowire surface. The amount of oxygen vacancies (V o ), which act as current paths in semiconducting oxide nanowires, were determined during the initial growth stage of crystal formation; this stage determines the threshold voltage (V th ), subthreshold slope (SS), and mobility characteristics of oxide NWTs. But, N 2 plasma successfully controlled transistor characteristics of NWT devices, including V th , by controlling V o on the surface of oxide nanowires afte...

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“…antimony by spray pyrolysis [9] or by sol–gel methods followed by spin-coating and annealing in different environments [10], ii.) manganese by long-time annealing of Mn/SnO 2 bilayers in air at 200 °C [11] or by co-precipitation [12], iii.) aluminum, copper or indium all by spray pyrolysis from ethanolic solutions [13] and iv.)…”

Section: Introductionmentioning

confidence: 99%

Zn/F-doped tin oxide nanoparticles synthesized by laser pyrolysis: structural and optical properties

Dumitrache

Morjan

Dutu

et al. 2019

Beilstein J. Nanotechnol.

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Zn/F co-doped SnO2 nanoparticles with a mean diameter of less than 15 nm and a narrow size distribution were synthesized by a one-step laser pyrolysis technique using a reactive mixture containing tetramethyltin (SnMe4) and diethylzinc (ZnEt2) vapors, diluted Ar, O2 and SF6. Their structural, morphological, optical and electrical properties are reported in this work. The X-ray diffraction (XRD) analysis shows that the nanoparticles possess a tetragonal SnO2 crystalline structure. The main diffraction patterns of stannous fluoride (SnF2) were also identified and a reduction in intensity with increasing Zn percentage was evidenced. For the elemental composition estimation, energy dispersion X-ray spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS) measurements were performed. In general, both analyses showed that the Zn percentage increases with increasing ZnEt2 flow, accompanied at the same time by a decrease in the amount of F in the nanopowders when the same SF6 flow was employed. The Raman spectra of the nanoparticles show the influence of both Zn and F content and crystallite size. The fluorine presence is due to the catalytic partial decomposition of the SF6 laser energy transfer agent. In direct correlation with the increase in the Zn doping level, the bandgap of co-doped nanoparticles shifts to lower energy (from 3.55 to 2.88 eV for the highest Zn dopant concentration).

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Optical, structural and electrical properties of Mn doped tin oxide thin films

Cited by 22 publications

References 21 publications

Dielectric Properties of SnO₂ Thin Film Using SPR Technique for Gas Sensing Applications

Dielectric Properties of SnO₂ Thin Film Using SPR Technique for Gas Sensing Applications

Surface Modification of Oxide Nanowires by Nitrogen Plasma

Zn/F-doped tin oxide nanoparticles synthesized by laser pyrolysis: structural and optical properties

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Optical, structural and electrical properties of Mn doped tin oxide thin films

Cited by 22 publications

References 21 publications

Dielectric Properties of SnO2 Thin Film Using SPR Technique for Gas Sensing Applications

Dielectric Properties of SnO2 Thin Film Using SPR Technique for Gas Sensing Applications

Surface Modification of Oxide Nanowires by Nitrogen Plasma

Zn/F-doped tin oxide nanoparticles synthesized by laser pyrolysis: structural and optical properties

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Dielectric Properties of SnO₂ Thin Film Using SPR Technique for Gas Sensing Applications

Dielectric Properties of SnO₂ Thin Film Using SPR Technique for Gas Sensing Applications