Optical Properties of Vanadium in 4 H Silicon Carbide for Quantum Technology

Abstract

We study the optical properties of tetravalent vanadium impurities in 4H silicon carbide (4H SiC). Emission from two crystalline sites is observed at wavelengths of 1.28 µm and 1.33 µm, with optical lifetimes of 163 ns and 43 ns. Group theory and ab initio density functional supercell calculations enable unequivocal site assignment and shed light on the spectral features of the defects. We conclude with a brief outlook on applications in quantum photonics. arXiv:1901.05371v2 [quant-ph]

Silicon carbide color centers for quantum applications

“…First optical studies showed strong and sharp luminescence lines, as well as narrow EPR features [46]. The defect was further found to have multiple charge states, which are of interest for spin-to charge conversion [47]. The negative charge state V (−) (also known as is V 3+ ) in for polytypes 4H and 6H, is studied in [45].…”

“…Among these the V Si [40] V C V Si , [41,42] the N C V Si [43,44] in various polytypes. In addition, some transition metal color centers such as Ti [45], V [45][46][47], and Mo [48]. On the right in red, color centers in SiC observed as single-photon sources with the maximum brightness observed in cts s −1 , among this the CAV [49,50], Si C [22], oxidation [22] and annealing [51] related and unknown, 3C IR emitters [52].…”

“…In the neutral charge state, vanadium defects in 4H SiC have been studied by group theory and ab initio DFT supercell calculations, predicting emission at wavelengths of a doublet at approximately 1.28 μm and a single line at 1.33 μm, known as α and β lines. The doublet has been attributed to the hexagonal site, the single line to the quasi-cubic site and they are showing optical lifetimes of 163 ns and 43 ns, respectively [47]. These emissions can be of interest for quantum photonics due to the spectral region ideal for cavity enhancement and the short lifetime, as such single-photon emission could be verified, however, it is not clear if their spectral purity can be used as a spin-photon interface.…”

“…Data for V Si are from [54, 56, 58, 60, 62, 69-73, 76-79, 147]; DV from [53, 55, 81-85]; IR unknown emitters from [52]; CAV form [49, 87-90, 92]; D1 color centre from [22] and related references. ; oxydation related defects from[93]; annealing related from[51]; N C V Si from[43,44,[94][95][96]; Ti from[100]; Cr from[45,101,102]; V from[45][46][47]103]; Mo from[45,48].…”

Применение Высокочастотной ЭПР Спектроскопии Для Идентификации И Разделения Позиций Азота И Ванадия В Кристаллах И Гетероструктурах Карбида Кремния

“…Подобные процессы идут и в случае компенсации доноров азота: если концентрация ванадия выше, чем концентрация некомпенсированного азота, тогда электроны с донорных уровней азота заполняют акцепторные уровни ванадия. В недавней работе [9] были изучены оптические характеристики ванадия в карбиде кремния с целью его применения в квантовой обработке информации и связи. Эти дефекты имеют узкие линии оптического излучения в телекоммуникационном окне (около 1300 нм).…”