Point Defects in Silicon Carbide for Quantum Technology

Csóré, András; Gali, Ádám

doi:10.1002/9783527824724.ch17

Cited by 4 publications

(4 citation statements)

References 145 publications

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“…In these defects, the d orbitals play a crucial role by carrying angular momentum and can interact with the external magnetic fields. However, these systems are also Jahn-Teller active, and the electron-phonon coupling will significantly affect the strength of interaction of the system with external magnetic fields, explaining the observations on vanadium and molybdenum qubits [301].…”

Section: Defect Centers In Sicmentioning

confidence: 99%

Material platforms for defect qubits and single-photon emitters

Zhang

Cheng

Chou

et al. 2020

Applied Physics Reviews

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125

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Quantum technology has flourished from quantum information theory and now provides a valuable tool that researchers from numerous fields can add to their toolbox of research methods. To date, various systems have been exploited to promote the application of quantum information processing. The systems that can be used for quantum technology include superconducting circuits, ultra-cold atoms, trapped ions, semiconductor quantum dots, and solid-state spins and emitters. In this review, we will discuss the state of the art on material platforms for spin-based quantum technology, with a focus on the progress in solid-state spins and emitters in several leading host materials, including diamond, silicon carbide, boron nitride, silicon, two-dimensional semiconductors, and other materials. We will highlight how first-principles calculations can serve as an exceptionally robust tool for finding the novel defect qubits and single photon emitters in solids, through detailed predictions of the electronic, magnetic and optical properties. c-BN ON-VB ~1.63 [147] Bi 3.3 [148] Bi-VN 3.57 [148] CN 4.09 [149] Si impurity 4.94 [150] Bi-VN 0.017 [150] Si impurity 0.007 [150] ZnO VZn 2.331 [151] CuZn 2.859 [152] VZn-ClO 2.365 [153] DAP 3.333 [154] CuZn 0.0015 [155] DAP 0.996 [156] GaN 0.855 a [157] 3.33 b , 2.594 c , 1.82 d Cr(4+) 1.193 [132] 0.71 [158] 0.63 c Cr(4+) 0.73 [132] Silicon G-centre CiCs 0.969 [159] Er(3+) 0.805 h [160] G-centre CiCs 0.30 [161] REI YAG:Pr(3+) 4.122 [162] Ce(3+) 2.536 [163] YSO: Er(3+) 0.807 [164] YVO:Yb(3+) 1.280 [165] LaFe3:Pr(3+) 2.594 [166] YAG:Ce(3+) 0.002 [167] a The possible candidates are CNONHi [168], CN-Hi [168], or CN-SiGa [169]. b Theoretical studies predicted that the possible candidates are CN [170] or other complexes [171], such as VGa-3H or VGaON-2H. Experimental studies proposed that the possible candidates are CN-ON [172,173] and CN-SiGa [173]. c Point defects near cubic inclusions within hexagonal lattice of GaN were proposed [174].

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Section: Defect Centers In Sicmentioning

confidence: 99%

Material platforms for defect qubits and single-photon emitters

Zhang

Cheng

Chou

et al. 2020

Applied Physics Reviews

Self Cite

125

123

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“…The quantum systems preparation and control mechanisms available can be determined based on the colour centres spin Hamiltonians, whose coefficients can be calculated using ab-initio computations [128]. In addition to the magnetic field B 0 in equation ( 1), all the interaction tensors and transition frequencies can be controlled by local electric fields and strain that perturb the electronic wavefunction [7].…”

Section: Quantum Systems Initialisation Read-out and Control Protocol...mentioning

confidence: 99%

Quantum systems in silicon carbide for sensing applications

Castelletto,

Lew,

Lin

et al. 2023

Rep. Prog. Phys.

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This paper summarizes recent studies identifying key qubit systems in silicon carbide (SiC) for quantum sensing of magnetic, electric fields, and temperature at the nano and microscale. The properties of colour centres in SiC, that can be used for quantum sensing, are reviewed with a focus on paramagnetic colour centres and their spin Hamiltonians describing Zeeman splitting, Stark effect, and hyperfine interactions. These properties are then mapped onto various methods for their initialization, control, and read-out. We then summarised methods used for a spin and charge state control in various colour centres in SiC. These properties and methods are then described in the context of quantum sensing applications in magnetometry, thermometry, and electrometry. Current state-of-the art sensitivities are compiled and approaches to enhance the sensitivity are proposed. The large variety of methods for control and read-out, combined with the ability to scale this material in integrated photonics chips operating in harsh environments, places SiC at the forefront of future quantum sensing technology based on semiconductors.

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“…In 6H-SiC there are two inequivalent k sites (k 1 , k 2 ). Common optically addressable defects in these polytypes (see table 1 and references [2,11]) can involve a single lattice site (e.g., the negatively charged silicon monovacancy, denoted V − Si ) or a pair of lattice sites as in the case of neutral divacancies (a missing carbon-silicon pair denoted VV 0 ) and the negatively charged NV center, which comprises a missing Si atom and a substitutional nitrogen in an adjacent carbon position (shown for 3C-SiC in figure 1(a)). nH-SiC defect complexes involving a pair of misplaced atoms can incorporate in several inequivalent crystallographic orientations, namely axial complexes parallel to the c-axis or basal complexes (having an in-plane component), resulting Table 1.…”

Section: Optical and Materials Properties Of The Common Sic Polytypesmentioning

confidence: 99%

“…Optically active defects in wide bandgap semiconductors are promising systems for future quantum technologies. Silicon carbide (SiC) in particular has emerged as an exciting platform for quantum information science (QIS) applications due to its unique crystallographic properties and wide variety of optically addressable defects [1,2]. In contrast to other popular wide bandgap QIS platforms such as diamond, SiC is reported to occur in over 200 polytypes [3], or crystal structures with variations in stacking sequence of the C-Si bilayer, each of which can host numerous defects (silicon monovacancies [4,5], divacancies [6], transition metal impurities [7,8], nitrogen vacancies [9,10], etc) with optical properties that vary based on both the polytype host and the defect configuration within the host lattice [11].…”

Section: Introductionmentioning

confidence: 99%

Designing silicon carbide heterostructures for quantum information science: challenges and opportunities

Harmon

Delegan

Highland

et al. 2022

Mater. Quantum. Technol.

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Silicon carbide (SiC) can be synthesized in a number of different structural forms known as polytypes with a vast array of optically active point defects of interest for quantum information sciences. The ability to control and vary the polytypes during SiC synthesis may offer a powerful methodology for the formation of new material architectures that expand our ability to manipulate these defects, including extending coherence lifetimes and enhancing room temperature operation. Polytypic control during synthesis presents a significant challenge given the extreme conditions under which SiC is typically grown and the number of factors that can influence polytype selection. In situ monitoring of the synthesis process could significantly expand our ability to formulate novel polytype structures. In this perspective, we outline the state of the art and ongoing challenges for precision synthesis in SiC. We discuss available in situ x-ray characterization methods that will be instrumental in understanding the atomic scale growth of SiC and defect formation mechanisms. We highlight optimistic use cases for SiC heterostructures that will become possible with in situ polytypic control and end by discussing extended opportunities for integration of ultrahigh quality SiC materials with other semiconductor and quantum materials.

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Point Defects in Silicon Carbide for Quantum Technology

Cited by 4 publications

References 145 publications

Material platforms for defect qubits and single-photon emitters

Material platforms for defect qubits and single-photon emitters

Quantum systems in silicon carbide for sensing applications

Designing silicon carbide heterostructures for quantum information science: challenges and opportunities

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