Material platforms for defect qubits and single-photon emitters

Abstract

Quantum technology has flourished from quantum information theory and now provides a valuable tool that researchers from numerous fields can add to their toolbox of research methods. To date, various systems have been exploited to promote the application of quantum information processing. The systems that can be used for quantum technology include superconducting circuits, ultra-cold atoms, trapped ions, semiconductor quantum dots, and solid-state spins and emitters. In this review, we will discuss the state of the art on material platforms for spin-based quantum technology, with a focus on the progress in solid-state spins and emitters in several leading host materials, including diamond, silicon carbide, boron nitride, silicon, two-dimensional semiconductors, and other materials. We will highlight how first-principles calculations can serve as an exceptionally robust tool for finding the novel defect qubits and single photon emitters in solids, through detailed predictions of the electronic, magnetic and optical properties. c-BN ON-VB ~1.63 [147] Bi 3.3 [148] Bi-VN 3.57 [148] CN 4.09 [149] Si impurity 4.94 [150] Bi-VN 0.017 [150] Si impurity 0.007 [150] ZnO VZn 2.331 [151] CuZn 2.859 [152] VZn-ClO 2.365 [153] DAP 3.333 [154] CuZn 0.0015 [155] DAP 0.996 [156] GaN 0.855 a [157] 3.33 b , 2.594 c , 1.82 d Cr(4+) 1.193 [132] 0.71 [158] 0.63 c Cr(4+) 0.73 [132] Silicon G-centre CiCs 0.969 [159] Er(3+) 0.805 h [160] G-centre CiCs 0.30 [161] REI YAG:Pr(3+) 4.122 [162] Ce(3+) 2.536 [163] YSO: Er(3+) 0.807 [164] YVO:Yb(3+) 1.280 [165] LaFe3:Pr(3+) 2.594 [166] YAG:Ce(3+) 0.002 [167] a The possible candidates are CNONHi [168], CN-Hi [168], or CN-SiGa [169]. b Theoretical studies predicted that the possible candidates are CN [170] or other complexes [171], such as VGa-3H or VGaON-2H. Experimental studies proposed that the possible candidates are CN-ON [172,173] and CN-SiGa [173]. c Point defects near cubic inclusions within hexagonal lattice of GaN were proposed [174].

Cation Vacancy in Wide Bandgap III‐Nitrides as Single‐Photon Emitter: A First‐Principles Investigation

“…The early‐stage SPE was based on single‐atom, [ 4 , 5 ] however, it suffered from drawbacks such as low efficiency and reliability. Solid‐state materials including quantum dots [ 6 , 7 ] and color centers [ 8 , 9 ] with atom‐like isolated levels are promising types of single‐photon sources due to the convenient combination with advanced technologies of the semiconductor industry. The color center, which is a kind of fluorescent defect in solid‐state material with the wavefunction localized on the atomic scale length, [ 10 ] can potentially realize single‐photon emission at room temperature.…”

Color Centers in Semiconductors for Quantum Applications : A High-Throughput Search of Point Defects in SiC

“…[16], [17], [18], [19] Not only is it a prime candidate for qubits [20] but also various other point defect applications, like sensors [21] and single photon emitters. [22] Single photon emitter [23] applications include quantum key distribution, quantum repeaters,…”

Manipulating Single‐Photon Emission from Point Defects in Diamond and Silicon Carbide

“…The quantum compatible charge state for each defect type is highlighted by the colored regions. SPE material platforms, [33] SiC for quantum applications, [34,35] diamond [36][37][38] and SiC [14] nanophotonics, and density functional theory (DFT) calculations to study point defects for quantum technology (QT). [39,40] The report is organized as follows.…”