Optical Properties of Thermally Evaporated (As2Se3)100-xAgx Thin Films

Ilcheva, V.; Petkov, P.; Boev, V. I.; Petkova, T.

doi:10.1016/j.phpro.2013.04.009

Cited by 13 publications

(5 citation statements)

References 14 publications

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“…The energy of E g opt corresponds to the wavelength 692 nm. The obtained value of the E g opt is in a good agreement with results published by other authors [18,19]. The as-evaporated As 2 Se 3 thin films were exposed to the band gap light (narrow band red LED with peak wavelength 690 nm, 60 mW) for the time periods ranging 0.5-60 min, which resulted in a photodarkening proved by decrease of the E g opt value to 1.73 eV after 60 min exposure (Fig.…”

Section: Resultssupporting

confidence: 90%

Selective wet etching of amorphous As2Se3 thin films

Loghina

Pálka

Buzek

et al. 2015

Journal of Non-Crystalline Solids

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Section: Resultssupporting

confidence: 90%

Selective wet etching of amorphous As2Se3 thin films

Loghina

Pálka

Buzek

et al. 2015

Journal of Non-Crystalline Solids

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“…Figure S12 in the Supporting Information shows the experimental E g values of perovskite thin films, as calculated using the well-known Tauc equation: − …”

Section: Results and Discussionmentioning

confidence: 99%

Anion Substitution Effects on the Structural, Electronic, and Optical Properties of Inorganic CsPb(I_1–xBr_x)₃ and CsPb(Br_1–xCl_x)₃ Perovskites: Theoretical and Experimental Approaches

et al. 2021

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Several inorganic perovskites of iodine, bromine, and chlorine halides have emerged as candidates for various optoelectronic devices. Highquality CsPb(I 1−x Br x ) 3 and CsPb(Br 1−x Cl x ) 3 (x = 0.00, 0.25, 0.50, 0.75, and 1.00) inorganic perovskite thin films were prepared in this study using a thermal evaporation system. Experiments and first-principles calculations were conducted to elucidate the structural, electronic, and optical properties of the prepared films at room temperature. The thin-film perovskite band gap was tuned from 1.85 to 3.13 eV by replacing I − with Br − and then Cl − . Dominant excitonic effects on the onset of optical absorption led us to explicitly account for enhancing absorption through the Sommerfield factor, enabling us to extract the electronic band gap and the exciton binding energy correctly. We correlated our experimental results with the theory of first principles and gained insight into the lattice parameters, electronic structure, excitonic binding energy (E b ), dielectric constant (ε), and reduced effective mass (μ) of the carriers. With increasing concentration (x) of Br and Cl, the E b increased from 39.44 meV for pure CsPbI 3 to 63.04 and 96.73 meV for pure CsPbBr 3 and CsPbCl 3 , respectively, because of a decrease in the dielectric constant and the almost constant value of μ at ∼0.051 m e . The Urbach energy (E U ) was calculated and found to fluctuate between 28 and 77 meV.

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“…surface silver photodeposition, used for the production of optical memories. Several studies of chalcogenide glasses with silver in the three and four-component system confirmed the appearance of this phenomenon [2].…”

Section: Introductionmentioning

confidence: 82%

Kinetic Analysis of Thermal Processes in Ag-As-S-Se System Based on DSC Measurements

et al. 2016

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Thermal properties of glasses from the system Agx(As40S30Se30)100−x for x = 0, 0.5, 1, 3, and 5 at.% were investigated by differential scanning calorimetry. The DSC curves were obtained under non-isothermal conditions which allowed determination of the glass transition temperature Tg (onset temperature), crystallization temperature Tp (corresponding to the crystallization peak maximum), melting temperature Tm, crystallization enthalpy Hc, and melting enthalpy Hm. The DSC curves obtained at the same heating rate were analyzed in order to study the variation of glass transition temperature with Ag concentration. Observed Tg shift toward higher values, with increase in the heating rate, is in agreement with the Lasocka equation. Samples with 3 at.% and 5 at.% Ag were further thermally treated at different heating rates with the aim of analyzing kinetic processes of crystallization. The Moynihan and Kissinger models were used to calculate the activation energy of glass transition and activation energy of crystallization. For the samples that showed the crystallization processes an assessment of the thermal stability was done based on different criteria.

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Optical Properties of Thermally Evaporated (As2Se3)100-xAgx Thin Films

Cited by 13 publications

References 14 publications

Selective wet etching of amorphous As2Se3 thin films

Selective wet etching of amorphous As2Se3 thin films

Anion Substitution Effects on the Structural, Electronic, and Optical Properties of Inorganic CsPb(I_1–xBr_x)₃ and CsPb(Br_1–xCl_x)₃ Perovskites: Theoretical and Experimental Approaches

Kinetic Analysis of Thermal Processes in Ag-As-S-Se System Based on DSC Measurements

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Optical Properties of Thermally Evaporated (As2Se3)100-xAgx Thin Films

Cited by 13 publications

References 14 publications

Selective wet etching of amorphous As2Se3 thin films

Selective wet etching of amorphous As2Se3 thin films

Anion Substitution Effects on the Structural, Electronic, and Optical Properties of Inorganic CsPb(I1–xBrx)3 and CsPb(Br1–xClx)3 Perovskites: Theoretical and Experimental Approaches

Kinetic Analysis of Thermal Processes in Ag-As-S-Se System Based on DSC Measurements

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Anion Substitution Effects on the Structural, Electronic, and Optical Properties of Inorganic CsPb(I_1–xBr_x)₃ and CsPb(Br_1–xCl_x)₃ Perovskites: Theoretical and Experimental Approaches