Selective wet etching of amorphous As2Se3 thin films

2016

Opt. Mater. Express

Amorphous chalcogenide thin films of Ge25S75 composition have been deposited by spin-coating technique. Optical properties of thin films were investigated by spectroscopic ellipsometry in UV-MIR spectral range. Obtained results prove increase of thin films refractive index in the transparent region and decrease of their thickness with increasing annealing temperature implying densification of the glass structure. Short wavelength absorption edge is shifting to lower energies (red shift) with increasing annealing temperature. Decreasing organic molecules content with increasing temperature of annealing was observed in MIR part of extinction coefficient and verified by Raman spectroscopy and EDS. Raman spectra also gave evidence of thermo-induced structural polymerization and decomposition of organic salts molecules yielding thin films with structure similar to the structure of the source bulk glass.

Section: Resultsmentioning

confidence: 99%

“…The etching kinetics of as-prepared and annealed thin film samples were studied by procedure presented in [21] in 0.1% vol. BA solution in aprotic solvent.…”

Section: Methodsmentioning

confidence: 99%

Structure and properties of spin-coated Ge_25S_75 chalcogenide thin films

2016

Opt. Mater. Express

“…% ethylenediamine solution in dimethyl sulfoxide at 25°C. Data were evaluated by procedure presented in [26]. The etching curves were analyzed at two wavelengths corresponding to the first interference maximum and the first interference minimum of measured transmission spectra.…”

Section: Methodsmentioning

confidence: 99%

Solution processed Ge₂₀Sb₅S₇₅ thin films: the effect of solution concentration and multiple layers stacking

2019

Opt. Mater. Express

Ge 20 Sb 5 S 75 thin films with high chemical resistance to aliphatic amines were deposited from solutions of various glass concentrations (0.015-0.09 g of grinded glass material/ml of n-butylamine) by the spin-coating technique. As-prepared and annealed thin films were analyzed by spectroscopic ellipsometry and EDS (energy-dispersive X-ray spectroscopy). Results proved that the refractive index of thin films was not affected by the solution concentration (within studied range), and the studied optical properties of deposited samples were homogenous in their volume. The Ge 20 Sb 5 S 75 solution of the highest concentration (0.09 g/ml) was chosen for deposition of thicker chalcogenide glass material using multiply deposition/thermal stabilization procedure. Prepared multilayers proved to have good optical quality and homogenous chemical resistance through the whole thickness. No interfaces between layers were observed from etching kinetics and SEM scans. Thus, the results confirmed that multiple layers stacking procedure is suitable for deposition of thick homogenous Ge 20 Sb 5 S 75 thin films.

“…The etching kinetics of as-prepared, annealed and exposed thin films were studied by procedure presented in [14,18], thin film samples were etched in 50 vol. % BA solution in aprotic solvent at 25 °C.…”

Section: Experiments Detailsmentioning

confidence: 99%

“…In order to study the effect of annealing and exposure on chemical resistance of TE and SC thin films, the Ge20Sb5S75 samples were etched in BA based solution using the experimental setup described in [14,18]. Based on the obtained data of films thicknesses and etching times, the etching rates vetch and etching selectivity (ratio between the etching rate of exposed and unexposed thin film) were calculated (Figure 7).…”

Section: Fig 5 the Raman Spectra Of Te Thin Films And Source Bulk Gmentioning

confidence: 99%

Optical properties and surface structuring of Ge20Sb5S75 amorphous chalcogenide thin films deposited by spin-coating and vacuum thermal evaporation

Materials Chemistry and Physics

et al. 2018

Self Cite

Thin amorphous films of Ge20Sb5S75 composition have been deposited by spin-coating and vacuum thermal evaporation techniques. Their optical properties were investigated by spectroscopic ellipsometry in UV-NIR spectral region. We report on the comparison of thermoand photo-induced changes in optical parameters, structure and chemical resistance of studied samples. Induced changes of films structure connected with changes of chemical stability were exploited for their surface structuring by photolithography and electron beam lithography.