Chalcogenide glass thin layers are useful to many practical applications especially for the fabrication of infrared (IR) optical elements. In comparison to the conventional vacuum deposition methods of their preparation, recently chemical methods such as spin coating are gaining attention. They involve dissolution of the source bulk glass in appropriate solvent and then depositing its thin layer. Chemical processes occurring during the glass dissolution and thin layer deposition determine the physicochemical properties of deposited thin layers. The structure of chalcogenide bulk glasses (As x S 100-x , where 30 x 40) and their solutions in n-butylamine has been studied in this work by Raman spectroscopy. From the composition and time dependence of Raman spectra of solutions the mechanism of arsenic-sulfur glass dissolution involving the reaction of aliphatic amine solvent with homopolar S-S bonds is proposed and the presence of alkyl ammonium arsenic sulfide salts in thin layers is established.
Thin amorphous films of Ge20Sb5S75 composition have been deposited by spin-coating and vacuum thermal evaporation techniques. Their optical properties were investigated by spectroscopic ellipsometry in UV-NIR spectral region. We report on the comparison of thermoand photo-induced changes in optical parameters, structure and chemical resistance of studied samples. Induced changes of films structure connected with changes of chemical stability were exploited for their surface structuring by photolithography and electron beam lithography.
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