Optical properties of silicon-implanted polycrystalline diamond membranes

Kambalathmana, H.; Flatae, Assegid M.; Hunold, L.; Sledz, Florian; Müller, Julian; Hepp, Marco; Schmuki, Patrik; Killian, Manuela S.; Lagomarsino, S.; Gelli, N.; Sciortino, S.; Giuntini, L.; Wörner, E.; Wild, C.; Butz, Benjamin; Agio, Mario

doi:10.1016/j.carbon.2020.12.031

Cited by 10 publications

(5 citation statements)

References 51 publications

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“…After annealing, the PL signal of the formed emitters is acquired using a confocal scanning setup described in detail in ref. [22]. Figure 1d shows an exemplary result, reproducing the implanted matrix except for the spots with 10 3 Si ions or less.…”

Section: Methods and Preparationmentioning

confidence: 91%

Scalable Creation of Deep Silicon‐Vacancy Color Centers in Diamond by Ion Implantation through a 1‐μm Pinhole

et al. 2021

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The controlled creation of quantum emitters in diamond represents a major research effort in the fabrication of single-photon devices. Here, the scalable production of silicon-vacancy (SiV) color centers in single-crystal diamond by ion implantation up to ≃ 1 𝛍m depths is presented. The lateral position of the SiV is spatially controlled by a 1-𝛍m pinhole placed in front of the sample, which can be moved nanometer precise using a piezo stage. The initial implantation position is controlled by monitoring the ion beam position with a camera. Hereby, silicon ions are implanted at the desired spots in an area comparable to the diffraction limit. The role of ions scattered by the pinhole and the activation yield of the SiV color centers for the creation of single quantum emitters is also discussed.

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Section: Methods and Preparationmentioning

confidence: 91%

Scalable Creation of Deep Silicon‐Vacancy Color Centers in Diamond by Ion Implantation through a 1‐μm Pinhole

et al. 2021

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“…PCD membrane is a good platform for photostable quantum emitters; for example, SiV color centers can be easily implanted in the first few nanometer layers for near‐field plasmon coupling. [ 30,46 ]…”

Section: Methodsmentioning

confidence: 99%

“…PCD membrane is a good platform for photostable quantum emitters; for example, SiV color centers can be easily implanted in the first few nanometer layers for near-field plasmon coupling. [30,46] The AFM head facilitated three directional degrees of freedom to control the probe. Besides, the sample was mounted on an XY piezo stage, and thus in total, we had five directional degrees of freedom.…”

Section: Methodsmentioning

confidence: 99%

Plasmonic Nanocone Scanning Antenna: Fabrication and Optical Properties

Kambalathmana,

Flatae,

Biagini

et al. 2023

Advanced Photonics Research

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Optical antennas are nanostructures that introduce unprecedented possibilities for light–matter interaction at the nanoscale. An appropriately tailored plasmonic antenna can enhance the total radiative decay rate and modify the angular radiation pattern of a single‐quantum emitter through controlled near‐field coupling. Despite their ability to surpass the fundamental diffraction limit and confine the electromagnetic field to a tiny mode volume, fabricating 3D sharp scanning nanoscale plasmonic structures with desired aspect ratio is yet an ambitious goal. The fabrication of nanocones by gold evaporation on commercial atomic force microscopy probes followed by a focused ion beam milling technique is presented. The method is versatile and allows the fabrication of nanocones with desired dimensions around 100 nm along with an aspect ratio of ≈1. Their optical properties are studied and it is shown how the variation in the refractive index of the dielectric substrate affects the localized surface plasmon resonance of the nanocones, the decay rate enhancement, and the quantum yield of an emitter relevant for fluorescence/Raman scanning experiments. Theoretical studies using finite‐difference time‐domain calculations have guided the fabrication process and are consistent with experimental results.

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“…In other words, it is questionable whether polycrystalline diamond defects (grain surface and sp 2 -related defects) might act as traps for the excited carriers of SiV centers, hence decreasing their internal PL quantum efficiency. The latter is relatively unimportant in a relatively thick (few microns) film where the surface to volume ratio is low; 14 however, in thin layers of 100–300 nm, the grain surface and sp 2 -defects may play an important role in the light emission efficiency of SiV centers. Diamond thin films prepared on a low-index substrate could be considered a promising material for diamond photonic structures provided the coupling of SiV centers to defects can manifest itself as inefficient.…”

Section: Introductionmentioning

confidence: 99%