Light emission dynamics of silicon vacancy centers in a polycrystalline diamond thin film

Trojánek, F.; Hamráček, Karol; Hanák, Martin; Varga, M.; Kromka, Alexander; Babčenko, Oleg; Ondič, Lukáš; Malý, P.

doi:10.1039/d2nr05470a

Cited by 6 publications

(2 citation statements)

References 19 publications

(28 reference statements)

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“…In contrast to many other color centers that are normally introduced in high-standard monocrystalline diamond, the purposely chosen SiV centers can be easily generated in scalable polycrystalline diamond microparticles at a much lower cost 64 , 65 . In fact, the Si substrate also serves as the Si doping source, and therefore we could “kill two birds with one stone”.…”

Section: Discussionmentioning

confidence: 99%

Multimodal dynamic and unclonable anti-counterfeiting using robust diamond microparticles on heterogeneous substrate

Zhang

Wang

et al. 2023

Nat Commun

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The growing prevalence of counterfeit products worldwide poses serious threats to economic security and human health. Developing advanced anti-counterfeiting materials with physical unclonable functions offers an attractive defense strategy. Here, we report multimodal, dynamic and unclonable anti-counterfeiting labels based on diamond microparticles containing silicon-vacancy centers. These chaotic microparticles are heterogeneously grown on silicon substrate by chemical vapor deposition, facilitating low-cost scalable fabrication. The intrinsically unclonable functions are introduced by the randomized features of each particle. The highly stable signals of photoluminescence from silicon-vacancy centers and light scattering from diamond microparticles can enable high-capacity optical encoding. Moreover, time-dependent encoding is achieved by modulating photoluminescence signals of silicon-vacancy centers via air oxidation. Exploiting the robustness of diamond, the developed labels exhibit ultrahigh stability in extreme application scenarios, including harsh chemical environments, high temperature, mechanical abrasion, and ultraviolet irradiation. Hence, our proposed system can be practically applied immediately as anti-counterfeiting labels in diverse fields.

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Section: Discussionmentioning

confidence: 99%

Multimodal dynamic and unclonable anti-counterfeiting using robust diamond microparticles on heterogeneous substrate

Zhang

Wang

et al. 2023

Nat Commun

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“…Functioning as a wide-gap semiconductor with exceptional optical, electrical, and thermal characteristics, diamond readily accommodates impurity elements (e.g., N, Si, Ge, and Ni) within its lattice, giving rise as effective color centers attributed to defects. , The diamond lattice fosters prolonged spin coherence time and steadfast optical quality within these color centers, thus suitable for a wide range of applications in quantum measurements. − Moreover, the nontoxic and biocompatible nature of these color centers shows the further application in fluorescence labeling and biosensing within living organisms. , …”

Section: Introductionmentioning

confidence: 99%

Synthesis of Diamonds with High-Brightness SiV^– Centers in the FeNi-Al-SiC System

Lai,

Lin,

Shen

et al. 2024

Crystal Growth & Design

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Diamonds containing high-brightness, high-density negatively charged silicon vacancy (SiV − ) color centers have promising applications in fluorescence labeling, weak magnetic field detection, and sensing. In this study, diamonds with SiV − color centers, featuring a minimum crystal dimension of approximately 10 μm, were prepared within the FeNi-Al system by employing silicon carbide (SiC) as the carbon and silicon source. The synthesis conditions entailed a pressured environment of 5.8 GPa, an elevated temperature of 1500 °C, and a very short growth duration span of 10 min. Impressively, the luminescence intensity attributed to SiV − color centers within the crystal reaches up to 60,000 cps, thereby signifying a discernible advance in this field. Moreover, the luminescence intensity of SiV − color centers also attains a remarkable homogeneity across diverse crystal instances with a normalized intensity of Raman peaks reaching up to a noteworthy 5.1 and a half-peak width as narrow as 3.6 nm at room temperature. These results prove that our delivered diamonds containing SiV − color centers attain remarkable spectral purity and exhibit superlative luminescence attributes. Our work presents an expedient, efficacious, and cost-effective modality for the systematic batch production of industrial-grade SiV − color center-integrated diamonds for further advanced diamond photonics.

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Experimental preparation and electronic structure calculation of vacancy color centers of diamond IVA group

Tan,

Wang,

Wei

et al. 2023

Indian J Phys

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Light emission dynamics of silicon vacancy centers in a polycrystalline diamond thin film

Abstract: The photoluminescence decay dynamics of silicon vacancy centers in a polycrystalline diamond film indicate that they are not linked with other defects of the film, thereby opening the door for their application in diamond photonics or sensing.

Cited by 6 publications

References 19 publications

Multimodal dynamic and unclonable anti-counterfeiting using robust diamond microparticles on heterogeneous substrate

Multimodal dynamic and unclonable anti-counterfeiting using robust diamond microparticles on heterogeneous substrate

Synthesis of Diamonds with High-Brightness SiV^– Centers in the FeNi-Al-SiC System

Experimental preparation and electronic structure calculation of vacancy color centers of diamond IVA group

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Light emission dynamics of silicon vacancy centers in a polycrystalline diamond thin film

Abstract: The photoluminescence decay dynamics of silicon vacancy centers in a polycrystalline diamond film indicate that they are not linked with other defects of the film, thereby opening the door for their application in diamond photonics or sensing.

Cited by 6 publications

References 19 publications

Multimodal dynamic and unclonable anti-counterfeiting using robust diamond microparticles on heterogeneous substrate

Multimodal dynamic and unclonable anti-counterfeiting using robust diamond microparticles on heterogeneous substrate

Synthesis of Diamonds with High-Brightness SiV– Centers in the FeNi-Al-SiC System

Experimental preparation and electronic structure calculation of vacancy color centers of diamond IVA group

Contact Info

Product

Resources

About

Synthesis of Diamonds with High-Brightness SiV^– Centers in the FeNi-Al-SiC System