Scalable Creation of Deep Silicon‐Vacancy Color Centers in Diamond by Ion Implantation through a 1‐μm Pinhole

Hunold, L.; Lagomarsino, S.; Flatae, Assegid M.; Kambalathmana, H.; Sledz, Florian; Sciortino, S.; Gelli, N.; Giuntini, L.; Agio, Mario

doi:10.1002/qute.202100079

Cited by 6 publications

(3 citation statements)

References 25 publications

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“…All‐optical thermometry with silicon‐vacancy (SiV) color centers [ 15 ] is free from this drawback due to their temperature‐dependent intense and narrow zero‐phonon line (ZPL) in the PL spectrum. [ 16 ] The SiV ZPL belongs to the first tissue transparency window, 700–950 nm [ 17 ] allowing one to suppress tissue autofluorescence and to improve sensitivity.…”

Section: Introductionmentioning

confidence: 99%

All‐Optical Thermometry with NV and SiV Color Centers in Biocompatible Diamond Microneedles

Golubewa

Padrez

Malykhin

et al. 2022

Advanced Optical Materials

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Monitoring of tiny intracell temperature variations is of high importance to understand the mechanisms of exothermic/endothermic processes inside the living cells. Small shifts in thermal balance may drastically influence cell functioning and induce pathological conditions. By using biocompatible diamond single‐crystal microneedles enriched with nitrogen‐vacancy (NV)/silicon‐vacancy (SiV) color centers, this study demonstrates all‐optical in vitro temperature monitoring in the physiologically significant range (25–55 °C). Zero‐phonon line (ZPL) of SiV centers belonging to the “therapeutic window” is used to improve measurement precision via suppression of the tissue autofluorescence. The simultaneous detection of the NV and SiV fluorescence enables two‐band visualization of the living cells combined with the temperature sensing. This study demonstrates experimentally that temperature can be measured by lifetime, full‐width at half maximum, and peak position of SiV ZPL, while accuracy can be further improved by normalizing the photoluminescence (PL) ZPL peak intensity on the PL signal measured at the wavelength where it is temperature independent. According to performed numerical simulations diamond microneedles enable real‐time temperature measurements because their characteristic heating time is less than 10 ns. The results open a way toward accurate, noninvasive, precise, and real‐time monitoring of temperature variations accompanying intracellular biochemical reactions and processes on the single‐cell level.

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Section: Introductionmentioning

confidence: 99%

All‐Optical Thermometry with NV and SiV Color Centers in Biocompatible Diamond Microneedles

Golubewa

Padrez

Malykhin

et al. 2022

Advanced Optical Materials

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“…However, the reliable and reproducible fabrication of GeV − centers has remained a key challenge for practical development of GeV-based devices. In that respect, the formation yield of optically active GeV − following ion implantation was reported to be 0.4%-0.7% [11] and 1.9% [3], hence tentatively lower than in the case of SiV − (0.5%-1% [12], 0.5%-6% [13,14], ∼1%-3% [15], ∼2% [16], ∼2.5% [17], 2.5%-3.75% [18], 2.98% [19], 3.2% [3], 5% [20], 15% [21]) or SnV − (∼0.7% [22], >1% [23], 0.4%-3% [24], 1%-4% [25,26], ∼2.5% [17], ∼5% [27], 60% [28]). GeV centers have also been produced by means of recoil implantation via Xe-irradiation of thin Ge films deposited on diamond, followed by 950 • C annealing [29].…”

Section: Introductionmentioning

confidence: 91%

Structural formation yield of GeV centers from implanted Ge in diamond

Wahl,

Correia,

Costa

et al. 2024

Mater. Quantum. Technol.

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In order to study the structural formation yield of germanium-vacancy (GeV) centers from implanted Ge in diamond, we have investigated its lattice location by using the β− emission channeling technique from the radioactive isotope 75Ge (t 1/2=83 min) produced at the ISOLDE/CERN facility. 75Ge was introduced via recoil implantation following 30 keV ion implantation of the precursor isotope 75Ga (126 s) with fluences around 2×1012 - 5×1013 cm−2. While for room temperature implantation fractions around 20% were observed in split-vacancy configuration and 45% substitutional Ge, following implantation or annealing up to 900°C, the split-vacancy fraction dropped to 6-9% and the substitutional fraction reached 85-96%. GeV complexes thus show a lower structural formation yield than other impurities, with substitutional Ge being the dominant configuration. Moreover, annealing or high-temperature implantation seem to favour the formation of substitutional Ge over GeV. Our results strongly suggest that GeV complexes are thermally unstable, and transformed to substitutional Ge by capture of mobile carbon interstitials, which is likely to contribute to the difficulties in achieving high formation yields of these optically active centers.

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“…Photoluminescence (PL) measurements confirm on average one emitter per location and show Poisson statistics of SiV activation. This approach allows the error of the SiV activation yield to be improved to 2.98 + 0.21/–0.24%, a 3-fold improvement of the uncertainty of the activation yield compared to currently reported yield measurements. ,, Hanbury–Brown–Twiss (HBT) measurements were performed on a subset of potential SPEs, with 82% showing SPE statistics. The remaining emitters showed multiphoton but still nonclassical emission statistics.…”

Section: Introductionmentioning

confidence: 99%

In Situ Ion Counting for Improved Implanted Ion Error Rate and Silicon Vacancy Yield Uncertainty

et al. 2022

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An in situ counted ion implantation experiment improving the error on the number of ions required to form a single optically active silicon vacancy (SiV) defect in diamond 7-fold compared to timed implantation is presented. Traditional timed implantation relies on a beam current measurement followed by implantation with a preset pulse duration. It is dominated by Poisson statistics, resulting in large errors for low ion numbers. Instead, our in situ detection, measuring the ion number arriving at the substrate, results in a 2-fold improvement of the error on the ion number required to generate a single SiV compared to timed implantation. Through postimplantation analysis, the error is improved 7-fold compared to timed implantation. SiVs are detected by photoluminescence spectroscopy, and the yield of 2.98% is calculated through the photoluminescence count rate. Hanbury–Brown–Twiss interferometry is performed on locations potentially hosting single-photon emitters, confirming that 82% of the locations exhibit single photon emission statistics.

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Scalable Creation of Deep Silicon‐Vacancy Color Centers in Diamond by Ion Implantation through a 1‐μm Pinhole

Cited by 6 publications

References 25 publications

All‐Optical Thermometry with NV and SiV Color Centers in Biocompatible Diamond Microneedles

All‐Optical Thermometry with NV and SiV Color Centers in Biocompatible Diamond Microneedles

Structural formation yield of GeV centers from implanted Ge in diamond

In Situ Ion Counting for Improved Implanted Ion Error Rate and Silicon Vacancy Yield Uncertainty

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