Structural formation yield of GeV centers from implanted Ge in diamond
Ulrich Wahl,
João Guilherme Correia,
Ângelo Costa
et al.
Abstract:In order to study the structural formation yield of germanium-vacancy (GeV) centers from implanted Ge in diamond, we have investigated its lattice location by using the β− emission channeling technique from the radioactive isotope 75Ge (t
1/2=83 min) produced at the ISOLDE/CERN facility. 75Ge was introduced via recoil implantation following 30 keV ion implantation of the precursor isotope 75Ga (126 s) with fluences around 2×1012 - 5×1013 cm−2. While for room temperature implantation fractions… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.