Optical properties of Ir2+-implanted silica glass

Cheang-Wong, J.C.; Oliver, A.; Roïz, Julie; Hernández, José Manuel; Rodrı́guez-Fernández, L.; Morales, Juan; Crespo-Sosa, A.

doi:10.1016/s0168-583x(00)00674-1

Cited by 38 publications

(26 citation statements)

References 17 publications

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“…[32][33][34] The WOB defects are generated in the Si + -implanted SiO 2 layers after a suitable thermal annealing. Oxygen vacancies are induced by the displacement of oxygen caused by the Si + implantation into a SiO 2 network, and the oxygen interstitials, which are considered as the precursors of the WOB defects, are created concurrently.…”

Section: Resultsmentioning

confidence: 99%

Evolution of Photoluminescence Mechanisms of Si⁺-Implanted SiO₂ Films with Thermal Annealing

Liu¹,

Tp²,

Y³

et al. 2008

j nanosci nanotechnol

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The information of band structure of silicon nanocrystal (nc-Si) embedded in SiO2 thin films synthesized by Si ion implantation and subsequent thermal annealing at various temperatures has been obtained from spectroscopy ellipsometric (SE) analysis. The indirect band structure and the energy gap of the nc-Si are not affected by the annealing. In contrast, the photoluminescence (PL) spectra show a continuous evolution with the annealing. Six PL bands located at 415, 460, 520, 630, 760, and 845 nm, respectively, have been observed depending on the annealing temperature. The annealing at 1100 degrees C yields the strongest PL band at 760 nm (approximately 1.63 eV) with the intensity much higher than that of all the other PL bands. Based on the knowledge of the band structure, the 760 nm-PL band could be attributed to the indirect band-to-band transition of the nc-Si assisted by the Si-O vibration of the nc-Si/SiO2 interface with the stretching frequency of approximately 1083 cm(-1) (approximately 0.13 eV). On the other hand, the first four PL bands mentioned above could originate from different extended defects in the oxide matrix, while the 845-nm PL band could be related to the interface luminescent centers.

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Section: Resultsmentioning

confidence: 99%

Evolution of Photoluminescence Mechanisms of Si⁺-Implanted SiO₂ Films with Thermal Annealing

Liu¹,

Tp²,

Y³

et al. 2008

j nanosci nanotechnol

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“…The 415-nm-PL emission originates from the oxygen interstitials with weak oxygen bond. 9 The 455 nm luminescence has previously been attributed to the NOV defects. providing by the reaction of O 3 ϵSi-O-SiϵO 3 →O 3 ϵSi-SiϵO 3 ϩO interstitial .…”

Section: Gong-ru Lin A) and Chun-jung Linmentioning

confidence: 96%

Improved blue-green electroluminescence of metal-oxide-semiconductor diode fabricated on multirecipe Si-implanted and annealed SiO2/Si substrate

Lin

2004

Journal of Applied Physics

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The defect-enhanced blue-green photoluminescence (PL) and electroluminescence (EL) of a metal-oxide-semiconductor (MOS) diode made on 500-nm-thick Si-ion-implanted SiO2 (SiO2:Si+) on Si substrate are demonstrated. A multienergy/multidose implantation and 1100 °C annealing process is employed to enhance the 415–455 nm PL contributed by weak oxygen bond and neutral oxygen vacancy defects. The Ag/SiO2:Si+/n-Si/Ag MOS diode exhibits a negative-differential resistance effect with threshold field strength of 300 kV/cm. The threshold pulsed current of deep-blue EL from Ag/SiO2:Si+/n-Si/Ag diode is 280 mA (or 3 V), which turns to white-light emission at saturation current of 680 mA and further shifts to green as the biased current increases up to 3 A. The 3 dB power decay within 3 h is also observed.

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“…In recent years, there has been growing interest on the study of linear and nonlinear optical properties of nanoclusters (NCs) of implanted ions in solids [1][2][3][4][5][6][7][8]. These NCs can be synthesized within the host material by ion implantation followed by an appropriate annealing process [1,3,9].…”

Section: Introductionmentioning

confidence: 99%

“…In the last decade, most of the laboratory experiments, associated with formation of metallic NCs, deal with implantation of metals of low reactivity e.g. Au, Ag, Cu, etc., in silica glasses [5]. These metallic NCs buried in glasses are promising bistable materials because they exhibit ultrafast nonlinear response at plasmon frequency.…”

Section: Introductionmentioning

confidence: 99%

“…A survey of the available literature reveals that the investigation on the properties of NCs [1][2][3][4][5][6][7][8] in solids has been hotly pursued in the recent years, however, their effects on the properties of host material have not been explored. We firmly believe that the interaction of the NCs with the carriers of the host material may modify optical properties of the implanted solids and excite new novel modes.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Dispersion and absorption of Alfven wave in ion-implanted group-IV semiconductor

Ghosh

Sharma²,

Salimullah

2005

Physica B: Condensed Matter

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Optical properties of Ir2+-implanted silica glass

Cited by 38 publications

References 17 publications

Evolution of Photoluminescence Mechanisms of Si⁺-Implanted SiO₂ Films with Thermal Annealing

Evolution of Photoluminescence Mechanisms of Si⁺-Implanted SiO₂ Films with Thermal Annealing

Improved blue-green electroluminescence of metal-oxide-semiconductor diode fabricated on multirecipe Si-implanted and annealed SiO2/Si substrate

Dispersion and absorption of Alfven wave in ion-implanted group-IV semiconductor

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Optical properties of Ir2+-implanted silica glass

Cited by 38 publications

References 17 publications

Evolution of Photoluminescence Mechanisms of Si+-Implanted SiO2 Films with Thermal Annealing

Evolution of Photoluminescence Mechanisms of Si+-Implanted SiO2 Films with Thermal Annealing

Improved blue-green electroluminescence of metal-oxide-semiconductor diode fabricated on multirecipe Si-implanted and annealed SiO2/Si substrate

Dispersion and absorption of Alfven wave in ion-implanted group-IV semiconductor

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Evolution of Photoluminescence Mechanisms of Si⁺-Implanted SiO₂ Films with Thermal Annealing

Evolution of Photoluminescence Mechanisms of Si⁺-Implanted SiO₂ Films with Thermal Annealing