Optical properties and thermal stability of GaAsN alloy films

Effect of gamma-ray irradiation on structural properties of GaAsN films grown by metal organic vapor phase epitaxy

“…Usually, this phenomenon is observed in diluted nitride semiconductors [11,12]. However, the optical properties of high-N-content GaAs 1 À x N x and In y Ga 1 À y As 1 À x N x films can be improved by rapid thermal annealing (RTA) [13][14][15].…”

Spectroscopic ellipsometry studies of reactively sputtered nitrogen-rich GaAsN films

“…Though several results of SE measurements have so far been reported on epitaxial or highly oriented GaN films grown by MBE or MOCVD techniques [22,23], the optical properties of GaAsN films have so far been mostly studied by transmission/absorption [24], photoluminescence [25], cathodoluminescence [13] or photocurrent [26] measurements, with only a few reports on SE measurements [16,27].…”