2003
DOI: 10.1007/s00339-002-1970-y
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Optical microscope with SNOM option for micro- and nanoanalytical investigations at low temperatures

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Cited by 11 publications
(6 citation statements)
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“…Figure 4 shows a scanned image of InAs quantum dots (QDs) grown on a semi-insulating GaAs wafer. Details regarding fabrication of the sample are published elsewhere [14]. The image presented in figure 4 represents contours of constant f (in this case f = 15 Hz ± 0.4) which may be interpreted as topography [15].…”
Section: Resultsmentioning
confidence: 99%
“…Figure 4 shows a scanned image of InAs quantum dots (QDs) grown on a semi-insulating GaAs wafer. Details regarding fabrication of the sample are published elsewhere [14]. The image presented in figure 4 represents contours of constant f (in this case f = 15 Hz ± 0.4) which may be interpreted as topography [15].…”
Section: Resultsmentioning
confidence: 99%
“…We placed the described device in the vacuum chamber of the cryostat of the low-temperature SNOM [20] in order to minimize the signal-cable lengths. In several months of operation in these conditions, there were no failures (AD829JNs in standard plastic DIP cases were used).…”
Section: Drawbacks Of the Devicementioning
confidence: 99%
“…When optionally operated as optical near-field microscope, the same optics can be used for coupling and/or for collecting optical radiation into or from the near-field probe [12]. This allows very local optical investigations and spectroscopic surface characterizations to be performed even on submicroscopic structures [13].…”
Section: Sensor Objective With Beam Deflection Detectionmentioning
confidence: 99%
“…0.28 nm) have been resolved with this measuring setup despite the relatively large measuring circle (sample, microscope body, granite stand, positioning stages -cf. Figure 1.2) [13]. These measurements were performed in a dynamic SFM mode using conventional silicon cantilever probes.…”
Section: Sensor Objective With Beam Deflection Detectionmentioning
confidence: 99%
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