Optical investigation of the influence of substrate orientation on spontaneous ordering in Ga0.5In0.5P alloy

CuPt B -type ordering of InGaP grown lattice matched to GaAs was investigated by in situ reflectance anisotropy spectroscopy and reflection high-energy electron diffraction. The experiments have been performed during InGaP growth both via metal-organic vapor phase epitaxy and chemical beam epitaxy. Additionally, total energy calculations ͑TE͒ have been performed for differently ordered InGaP slabs. From both experiment and TE calculations we conclude that bulk ordering only occurs when InGaP growth is performed under phosphorus-rich (2ϫ1)-like surface conditions. Bulk ordering completely disappears under growth conditions which cause a less-phosphorus-rich (2ϫ4)-like surface dimer configuration. P dimers in the (2ϫ1) symmetry at the growth surface trigger the bulk ordering driven by an energy gain of 0.26 eV per surface atom according to our TE calculations. ͓S0163-1829͑99͒05635-0͔

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“…[12][13][14]28,29 Therefore, we varied the bulk ordering by systematically changing the growth parameters as shown in Fig. 1.…”

Section: A Dependence Of the Ordering On Growth Parametersmentioning

confidence: 99%

Correlation of InGaP(001) surface structure during growth and bulk ordering

et al. 1999

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“…This phenomenon is driven by the reconstruction of the surface and step motion during the MOVPE growth, depending both on the orientation of the substrate [13] and on growth parameters such as temperature, V/Ill ratio [14,15], and growth rate [16]. The most attractive effect associated with ordering in InGaP 2 is the predicted decrease of 260 meV in the band-to-band transition [17].…”

Section: Interconnecting Junctionsmentioning

confidence: 99%

Irradiation Effects in Space Solar Cells Made of Multiple Absorbers

et al. 2001

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Solar cells made of multiple absorbers are a commonly used approach for improving efficiency due to their extended range of spectral sensitivity. Indeed, efficiencies nearing the theoretical maximum have been achieved with a triple-junction device made of Ino. 5 ,Gao. 49 P (InGaP 2 ), GaAs, and Ge solar cells connected in series. For extraterrestrial applications, there is the added requirement of radiation tolerance. The main challenge for space power-generation is therefore the development of highly efficient and radiation-tolerant devices. We have investigated several aspects of the radiation response of solar cells made of multiple absorbers, such as multijunction devices and quantum-well solar cells. Novel possibilities such as quantumdot solar cells and ordered-disordered heterostructures are proposed.

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“…It has received a great deal of attention because it affects the electro-optical properties of the alloy and reveals interesting surface-controlled epitaxial growth processes. [1][2][3][4][5][6][7][8][9][10][11][12][13] Although many techniques, such as excitation photoluminescence ͑PLE͒, are well suited to measuring the effects of ordering on electro-optical properties, they can only estimate the degree of ordering in a sample by relying on theoretical calculations modeling the effects of ordering on the electronic band structure. 4,5 Recently, nuclear magnetic resonance spin echo measurements have been applied to the evaluation of the order parameter.…”

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confidence: 99%

“…CuPt ordering is the most commonly observed and studied ordering in ternary III-V alloys grown epitaxially on approximately ͓001͔ oriented substrates. [1][2][3][4][5][6][7][8][9][10][11][12][13] Only partial ordering has been achieved in these samples. In a III a -III b -V zincblende alloy with perfect ͓111͔ CuPt ordering, the III a and III b atoms occupy alternate ͑111͒ planes.…”

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confidence: 99%

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X-ray diffraction and excitation photoluminescence analysis of ordered GaInP

et al. 1998

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X-ray diffraction is shown to provide a direct, quantitative, structural measurement of the degree of spontaneous ordering in GaInP. In this paper we combine x-ray diffraction and excitation photoluminescence analyses of CuPt-ordered GaInP, and comparing the results to theoretical predictions for the dependence of the band structure on order parameter, determine the values of the band-gap reduction and crystal-field splitting parameters for the perfectly ordered alloy. ͓S0163-1829͑98͒06447-9͔

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Optical investigation of the influence of substrate orientation on spontaneous ordering in Ga0.5In0.5P alloy

Cited by 10 publications

References 22 publications

Correlation of InGaP(001) surface structure during growth and bulk ordering

Correlation of InGaP(001) surface structure during growth and bulk ordering

Irradiation Effects in Space Solar Cells Made of Multiple Absorbers

X-ray diffraction and excitation photoluminescence analysis of ordered GaInP

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