Correlation of InGaP(001) surface structure during growth and bulk ordering

Abstract

CuPt B -type ordering of InGaP grown lattice matched to GaAs was investigated by in situ reflectance anisotropy spectroscopy and reflection high-energy electron diffraction. The experiments have been performed during InGaP growth both via metal-organic vapor phase epitaxy and chemical beam epitaxy. Additionally, total energy calculations ͑TE͒ have been performed for differently ordered InGaP slabs. From both experiment and TE calculations we conclude that bulk ordering only occurs when InGaP growth is performed under phosphorus-rich (2ϫ1)-like surface conditions. Bulk ordering completely disappears under growth conditions which cause a less-phosphorus-rich (2ϫ4)-like surface dimer configuration. P dimers in the (2ϫ1) symmetry at the growth surface trigger the bulk ordering driven by an energy gain of 0.26 eV per surface atom according to our TE calculations. ͓S0163-1829͑99͒05635-0͔

Research on III-V Semiconductor Interfaces: Its Impact on Technology and Devices

“…It was already argued for some time [6], that the ordering effect in InGaP layers is related to the surface structure (reconstruction) during growth and it has been proposed that phosphorus (P) dimers along the ½110 direction promote the ordering process. In order to clarify this effect Zorn et al [7] performed detailed surface sensitive reflectance anisotropy spectroscopy (RAS) studies of InGaP growth under metal organic vapour phase epitaxy (MOVPE) and chemical beam epitaxy (CBE) conditions. The latter technique being performed in a UHV system allows the simultaneous observation of high-energy electron diffraction (RHEED) and RAS during growth.…”

“…This information could then be transferred to MOVPE growth under elevated pressure conditions, where only the optical surface sensitive RAS technique can be applied. Furthermore, Zorn et al [7] took into account, for the first time, in the analysis of their RAS data, bulk contributions due to ordering induced spectral changes and could clearly separate the RAS features originating from the (2 Â 4) and (2 Â 1) surface reconstructions. They thus could establish both for MOVPE and CBE growth of InGaP a clear correlation between the ordering parameter h and the intensity of a characteristic RAS spectral feature at 2.9 eV photon energy (only surface contribution) under different growth conditions and wafer off-orientations (Fig.…”

In‐situ monitoring of MOVPE growth with reflectance anisotropy spectroscopy in an industrial used multi wafer reactor

“…The spectra reveal a phosphorous rich (2x1) reconstruction. This reconstruction is known to produce a high degree of GaInP bulk ordering [5].…”

“…Depending on the growth parameters GaInP shows CuPt B -type ordering on the group-III sublattice [4]. This ordering effect leads to a reduction of the band gap E 0 and a reduced bulk symmetry that gives a contribution to the RAS signal [5]. GaInP layers have been grown lattice matched on GaAs wafers with a 0°, 2° and 6° towards (111)A off orientation.…”

Ordering of In and Ga in Epitaxially Grown In<SUB>0.53</SUB>Ga<SUB>0.47</SUB>As Films on (001) InP Substrates

“…The substrate temperature influences the ordering behavior of In and Ga in an InGaAs film grown on InP, which is consistent with the strong effect of high temperature on surface segregation during growth. 36) Zorn et al 37) discussed the relation between the spontaneous ordering, dependence of the ordering on the growth parameter and the reconstructed surfaces, in which the induced strain of the reconstructed surface leads to a spontaneously ordered alloy. The different growth temperatures correspond to different surface structures, and we believe that they lead to differently ordered alloys, such as the TP-A and CuPt-B type orderings.…”