In‐situ monitoring of MOVPE growth with reflectance anisotropy spectroscopy in an industrial used multi wafer reactor

Abstract

We investigated structures grown in an industrial used multi wafer MOVPE reactor, in order to understand the influence of the growth parameters on the RAS spectra. We investigated the effect of p-and ntype doping on the RAS spectra of different materials important for optoelectronic devices such as AlGaAs and InGaAlP. Furthermore, the effect of ordering in GaInP layers on the RAS spectra has been studied. Growth parameters such as substrate misorientation, growth temperature and doping level have been varied in order to study different degrees of ordering in AlGaInP.