Optical identification of the gallium vacancy in neutron-irradiated gallium arsenide

Growth temperature effects on boron incorporation and optical properties of BGaAs/GaAs grown by MOCVD

“…2. We have observed the PL emission from the GaAs substrates to be dominated by the transition (e-C As ) carbon impurity and its optical LO phonon replica at 1460 meV [10]. These observed carbon impurities originated from the precursors (organic material such use triethylgallium (TEG) and arsine (AsH 3 )), which is associated to the growth condition [8].…”

Clustering effects in optical properties of BGaAs/GaAs epilayers

“…This emission band is associated to the exciton recombination in the BGaAs epilayers for each nominal boron content x b ¼ 1.64% and 3.04%, respectively. Moreover, we note that the PL emission from the GaAs substrates is dominated by the transition (e-C As ) carbon impurity and its optical LO phonon replica [9]. This observed carbon impurities originated from the precursors (organic material such us triethylgallium and Arsine), which is associated to the growth condition [7].…”

Fermi edge singularity evidence from photoluminescence spectroscopy of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs grown on (311)A GaAs substrates

“…5b). When the excitation density subsequently increases the steepness of the spectral drop-fall after the FES feature abruptly grows and the PL signal detected behind E F at 1.443 eV is associated with emission of Ga As [30] in n-doped AlGaAs barrier ( Fig. 5(a) and (b)).…”

“…In addition, we have associated the two PL peaks about 1.476 and 1.443 eV (Fig. 2a) with recombination involving the gallium vacancy (V Ga ) and the gallium antisite (Ga As ) [30] in the n-type doped barrier. The apparition of such defects in our P-HEMT samples can be attributed to the use of a high As 4 /Ga BEP ratio during the growth of the n-doped barrier [31][32][33].…”