Growth temperature effects on boron incorporation and optical properties of BGaAs/GaAs grown by MOCVD

Kinetically Limited Molecular Beam Epitaxy of BxGa1–xAs Alloys

“…In materials grown with molecular beam epitaxy (MBE), fast growth rate and reduced substrate temperatures, , in concert with large V:III flux ratios and surfactant-mediated epitaxy, have been shown to promote substitutional incorporation of B. Similarly, low growth temperatures, ,, high V:III precursor ratios, and optimized precursor chemistry have enabled the highest concentrations of B in metal-organic chemical vapor deposition (MOCVD)-grown B x Ga 1– x As. Despite these optimizations, substitutional B concentrations in BGaAs reported in the literature remain limited to less than ∼8% in both MBE- and MOCVD-grown materials.…”

The effect of nitridation on the optical properties of InAs quantum dots grown on GaAs substrate by MBE

“…The growth of self-assembled InAs/GaAs quantum dots (QDs) has been studied extensively in recent years with particular prominence on optoelectronic devices [1,2] and for high performance and low-cost optical communication lasers [3,4]. However, a large InAs-GaAs lattice mismatch (7%) induces an unwanted quantum dot band gap increase [5,6].…”

Influence of temperature and illumination on the characteristics of nanocrystalline Ga0.29 Al0.71As based heterojunction prepared by MOCVD

“…In addition, metal organic chemical vapor deposition (MOCVD) [8,9,[12][13][14][15] is another technique that could also provide all the requirements for fabricating high efficiency solar cells. This is because MOCVD can grow semiconductors with large area and ultra-thin crystal layer with high uniformity and high-quality crystals, and with uniform doping profile necessary for an abrupt junction.…”

“…Since the solar spectrum is broad by nature, the window effect for high-performance solar cells is also feasible by MOCVD using lattice-matched AlGaAs mixed crystals. Therefore, despite the high investment cost, the solar cell structure made from III-V compound semiconductors could be optimized and fabricated by MOCVD [8,9,[12][13][14][15].…”