Optical Gain in Laser Heterostructures with an Active Area Based on an InGaAs/InGaAlAs Superlattice

Karachinsky, L. Ya.; Novikov, I. I.; Babichev, A. V.; Gladyshev, A. G.; Kolodeznyi, E. S.; Rochas, S. S.; Kurochkin, A. S.; Bobretsova, Yu. K.; Klimov, A. A.; Denisov, D. V.; Voropaev, K. O.; Ionov, A. S.; Bougrov, V. E.; Egorov, A. Yu.

doi:10.1134/s0030400x19120099

Cited by 14 publications

(7 citation statements)

References 6 publications

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“…In such structures minibands are formed [141], which are located both in the region of the QW and in the region of barrier layers. Thus, the width of the active region's effective part in such structures is greater than that of QWbased structures, which is due to an increase in standing light wave overlapping with the region that amplifying the light [142]. The demonstrated in 2022 [111] 1300 nm VCSEL with an InGaAs superlattice obtained by WF has an output optical power of 6 mW, which is superior to most of the LW QW-based VCSELs.…”

Section: Year Of Publicationmentioning

confidence: 99%

Review on Single-Mode Vertical-Cavity Surface-Emitting Lasers for High-Speed Data Transfer

Rochas¹,

Kovach²,

Kopytov³

et al. 2022

Rev. Adv. Mater. Technol.

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Vertical-cavity surface-emitting lasers (VCSELs) are wide-spread laser sources for different applications in optical communication and sensing. The evolution of fabrication processes and new technological approaches allow to obtain high-Q single-mode VCSELs with data rates more than 100 Gbps. This review discusses basic designs and construction features of VCSELs that effect on their applications. The advances over the past 20 years for single-mode VCSELs of 850 nm, 1300 nm and 1550 nm wavelength ranges are presented.

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Section: Year Of Publicationmentioning

confidence: 99%

Review on Single-Mode Vertical-Cavity Surface-Emitting Lasers for High-Speed Data Transfer

Rochas¹,

Kovach²,

Kopytov³

et al. 2022

Rev. Adv. Mater. Technol.

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“…Alternatively, one can consider the option of a short-period InGaAs/InAlGaAs superlattice (SL) as an active region, where the energy minibands for charge carriers are formed over the entire thickness of the SL due to the splitting of the energy levels caused by tunneling interaction. Such a concept makes it possible to implement a higher modal gain 12 . Abrupt interfaces in SL can be implemented with the molecular-beam epitaxy (MBE) technique in contrast to metalorganic vapor-phase epitaxy (MOVPE), where precursor gas residence time can have a negative impact on the quality of the interfaces when the layer thicknesses are <1 nm.…”

Section: Introductionmentioning

confidence: 99%

“…Such a concept makes it possible to implement a higher modal gain. 12 Abrupt interfaces in SL can be implemented with the molecular-beam epitaxy (MBE) technique in contrast to metalorganic vapor-phase epitaxy (MOVPE), where precursor gas residence time can have a negative impact on the quality of the interfaces when the layer thicknesses are <1 nm.…”

Section: Introductionmentioning

confidence: 99%

20-Gbps 1300-nm range wafer-fused vertical-cavity surface-emitting lasers with InGaAs/InAlGaAs superlattice-based active region

et al. 2022

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. 1300-nm vertical-cavity surface-emitting lasers (VCSELs) were fabricated by wafer fusion (WF) technique and studied. The active region based on InGaAs/InAlGaAs superlattice was grown by molecular-beam epitaxy (MBE). Current and optical confinement was provided by composite n ++ -InGaAs / p ++ -InGaAs / p ++ -InAlGaAs buried tunnel junction (BTJ) realized by selective etching and overgrowth by n-InP. AlGaAs/GaAs distributed Bragg reflectors grown by MBE were applied on both sides of the cavity by WF and substrate removal techniques. The devices with BTJ diameter of 5 μm demonstrated a stable single-mode lasing with threshold current <1.3 mA and output optical power >6 mW and operation in a wide temperature range. The measured −3 dB bandwidth was more than 8 GHz at 20°C and about 5.5 GHz at 85°C, the eye diagrams were open with a bit rate up to 20 Gbps using nonreturn-to-zero (NRZ) modulation standard at 20°C. Using 5-tap feedforward equalizer, the NRZ transmission at 25 Gbps was demonstrated up to 5 km single-mode fiber at 20°C. The developed VCSELs represent a platform for further significant performance improvement.

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“…The use of a system of tunnel-connected QWs (shortperiod superlattice (SL)), where the splitting of size quantization levels in tunnel-connected wells leads to the formation of energy minibands [13], is an alternative solution. It potentially allows one to improve carrier localization and obtain significantly higher values of Ŵ z than those typical of thin InGaAs QWs [14]. It should be noted that one may adjust the miniband width efficiently by varying the thickness of QWs and barrier layers.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the characteristics of the InGaAs/InAlGaAs superlattice for 1300 nm range vertical-cavity surface-emitting lasers

et al. 2022

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X-ray structural analysis and photoluminescence spectroscopy techniques were used to study heterostructures based on InGaAs/InAlGaAs superlattice for active regions of 1300 nm range lasers grown by molecular beam epitaxy. It is shown that the grown heterostructures have a high crystal quality. The perpendicular lattice mismatch of the average crystal lattice constant of the InGaAs/InAlGaAs superlattice with respect to the crystal lattice constant of the InP substrate is estimated at ~+0.01%. An analysis of the photoluminescence spectra made it possible to conclude that the contribution of Auger recombination is insignificant in the studied range of excitation power density. Studies of vertical-cavity surface-emitting lasers with an active region based on the InGaAs/InAlGaAs superlattice made it possible to estimate the gain coefficient at a level of 650 cm-1 for the standard logarithmic approximation of the dependence of the gain on the current density. The transparency current density of the laser was 400-630 A/cm2, which is comparable to the record low values for the case of highly strained InGaAs-GaAs and InGaAsN-GaAs quantum wells in the spectral ranges of 1300 nm, respectively. Keywords: superlattice, vertical-cavity surface-emitting laser, optical gain.

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Optical Gain in Laser Heterostructures with an Active Area Based on an InGaAs/InGaAlAs Superlattice

Cited by 14 publications

References 6 publications

Review on Single-Mode Vertical-Cavity Surface-Emitting Lasers for High-Speed Data Transfer

Review on Single-Mode Vertical-Cavity Surface-Emitting Lasers for High-Speed Data Transfer

20-Gbps 1300-nm range wafer-fused vertical-cavity surface-emitting lasers with InGaAs/InAlGaAs superlattice-based active region

Investigation of the characteristics of the InGaAs/InAlGaAs superlattice for 1300 nm range vertical-cavity surface-emitting lasers

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