20-Gbps 1300-nm range wafer-fused vertical-cavity surface-emitting lasers with InGaAs/InAlGaAs superlattice-based active region

Abstract

. 1300-nm vertical-cavity surface-emitting lasers (VCSELs) were fabricated by wafer fusion (WF) technique and studied. The active region based on InGaAs/InAlGaAs superlattice was grown by molecular-beam epitaxy (MBE). Current and optical confinement was provided by composite n ++ -InGaAs / p ++ -InGaAs / p ++ -InAlGaAs buried tunnel junction (BTJ) realized by selective etching and overgrowth by n-InP. AlGaAs/GaAs distributed Bragg reflectors grown by MBE were applied on both sides of the cavity by WF and substrate removal techniques. The devices with BTJ diameter of 5 μm demonstrated a stable single-mode lasing with threshold current <1.3 mA and output optical power >6 mW and operation in a wide temperature range. The measured −3 dB bandwidth was more than 8 GHz at 20°C and about 5.5 GHz at 85°C, the eye diagrams were open with a bit rate up to 20 Gbps using nonreturn-to-zero (NRZ) modulation standard at 20°C. Using 5-tap feedforward equalizer, the NRZ transmission at 25 Gbps was demonstrated up to 5 km single-mode fiber at 20°C. The developed VCSELs represent a platform for further significant performance improvement.

Study of active regions based on multiperiod GaAsN/InAs superlattice

“…The thickness of the layers was measured using TEM images obtained near the axis of the zone [1][2][3][4][5][6][7][8][9][10]. The main difficulty in measuring the thicknesses of thin layers with smooth boundaries was to determine the position of these boundaries.…”

“…The first approach is to use active regions of InAlGaAs-InP with the formation of a buried tunnel junction (BTJ) for current and optical Confinements, along with the use of high-contrast dielectric distributed Bragg reflectors based on CaF 2 /Si [1][2][3]. The second approach is to use the technology of double wafer fusion [4][5][6][7][8]. In this case, the heterostructure of the active region In(Al)GaAs-InP with BTJ is fused with heterostructures of the upper and lower distributed Bragg reflectors on GaAs substrates, followed by the formation of mesa structures [9].…”

Simulation of the energy-band structure of superlattice of quaternary alloys of diluted nitrides

“…One of the approaches to increase the modal gain of monolithic long-wavelength VCSEL, along with the use of highly mechanically stressed QW [11,12], is the use of short-period superlattices (SL). Previously, the results on the creation of long-wavelength VCSEL obtained by the technology of wafer sintering [13][14][15] with an active area based on In 0.57 Ga 0.43 As/In 0.53 Ga 0.20 Al 0.27 As SL, as well as metamorphic VCSEL with active area based on In 0.41 Ga 0.59 As/In 0.25 Ga 0.75 As SL [16].…”

Моделирование Зонной Структуры Сверхрешеток На Основе "Разбавленных" Нитридов

“…Одним из подходов по повышению модального усиления монолитных длинноволновых ВИЛ, наряду с применением сильно механически-напряженных КЯ [11,12], является использование короткопериодных сверхреше-ток (СР). Ранее представлены результаты по созданию длинноволновых ВИЛ, полученных по технологии спекания пластин [13][14][15] с активной областью на основе In 0.57 Ga 0.43 As/In 0.53 Ga 0.20 Al 0.27 As СР, а также метаморфных ВИЛ с активной областью на основе In 0.41 Ga 0.59 As/In 0.25 Ga 0.75 As СР [16].…”