The paper describes an algorithm for computing the interband transition energy for superlattices of quaternary solid solutions of diluted nitrides. Using the described method, the authors have conducted several numerical simulations of test structures with InGaAsN quantum wells for the method verification using experimental data and comparison with other approaches. Simulation results showed the validity of the used approach. The hybridization parameter estimation method for Indium mole-fraction below 30 % is presented. Based on simulation results, the authors propose InGaAs/GaAsN superlattices' parameters for the implementation of the source emitting in the 1.3 µm spectral range.
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