Optical-energy properties of CdSe thin film

Ільчук, Г. А.; Petrus, R. Yu.; Kashuba, A. I.; Semkiv, І. V.; Zmiiovska, E. O.

doi:10.1080/15421406.2020.1732532

Cited by 23 publications

(12 citation statements)

References 19 publications

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“…The obtained value of the ZnO: Al thin film thickness is 454.83 nm. The optical properties of a thin film (refractive index n(λ), absorption coefficient α(λ), extinction coefficient k(λ), dielectric functions ε(λ), optical conductivity σ(λ) and thickness d) can be easily evaluated from a transmission spectrum with interference effects using the envelope method [26][27][28][29][30][31] (Fig. 2).…”

Section: Resultsmentioning

confidence: 99%

Effect of Al doping on optical properties of ZnO thin films: theory and experiment

Kovalenko

Bovgyra

Dzikovskyi

et al. 2021

Phys. Chem. Solid St.

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The structural, electronic, and optical properties of zinc oxide thin films with Al-doping have been investigated experimentally and with density functional theory (DFT) calculations. Changes in properties of doped thin films, which are deposited on a glass substrate by a high-frequency magnetron sputtering method, are monitored using X-ray diffraction data and UV measurements. Our theoretical calculations show that the electronic structure of ZnO: Al can be well described by the DFT+U method. The XRD measurements demonstrated the formation of a pure single ZnO phase and Al atoms is well incorporated in the ZnO lattice. Also, we determine the optical constants such as optical dielectric function, refractive index, optical band gap values, extinction coefficient, and optical conductivity of the doping films through transmittance spectra. The calculated results show the change of lattice parameters Al-doped ZnO. The optical band gap of ZnO: Al is increased compared with pure ZnO. Besides, around the Fermi level of Al-doped ZnO was emerged the shallow donor states from mainly 3s-Al states. Our DFT calculations of optical properties Al-doped ZnO agree satisfactorily with the experimentally measured transmittance values.

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Section: Resultsmentioning

confidence: 99%

Effect of Al doping on optical properties of ZnO thin films: theory and experiment

Kovalenko

Bovgyra

Dzikovskyi

et al. 2021

Phys. Chem. Solid St.

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“…The dispersions of the refractive index n() and extinction coefficient k() (k()  ()/4) (Fig. 4) of a thin film can be easily evaluated from the transmission spectrum with interference effects using the envelope method [9,[31][32]. This method is applicable in the case of a weakly absorbing thin film on an entirely transparent substrate, which is much thicker than a thin film.…”

Section: Analysis Of the Refractive Indexmentioning

confidence: 99%

Optical and Dispersion Parameters of the Al-doped ZnO Thin Film

Kashuba¹,

Andriyevsky²,

Ільчук³

et al. 2021

J. Nano- Electron. Phys.

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The results of studies of the dispersion of optical functions and optical constants for zinc oxide thin film doped with aluminum are presented. The deposition of Al-doped ZnO (2.5 wt. %) thin films is performed by magnetron sputtering. Al-doped ZnO thin film crystallizes in a hexagonal structure (structure type ZnO, space group P63mc (No. 186) with unit-cell dimensions a  3.226(2) Å and c  5.155(6) Å (V 46.49(6) Å 3 ). Optical transmittance spectra (300-2500 nm) shows that the Al-doped ZnO thin film is of high optical quality, and the value of the optical band gap (3.26 eV) is very close to undoped samples. The study of optical functions is performed on the basis of the experimentally measured transmission spectrum using the bypass method. The spectral behavior of optical functions, such as refractive index, extinction coefficient, absorption index, dielectric functions and optical conductivity, is established. The value of Urbach energy and the dependence of oscillator strength on the size of the band gap and the concentration of doping element are determined. It is observed an increase in Urbach energy for the Al-doped ZnO thin film in comparison to the undoped ones. An almost twofold increase in the optical oscillator strength value is revealed for the thin film studied. The influence of aluminum doping on the dynamic change of optical mobility, optical resistance and relaxation time is established for the first time for the studied compound. The value of the plasma frequency is also determined and its correlation with the carrier density is defined. The doping of ZnO thin films with aluminum leads to an increase in optical mobility, relaxation time and plasma frequency that is revealed by comparison with reference data for the undoped ZnO. Due to good optical properties, this thin film is a good candidate as a material for optoelectronic devices.

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“…Cadmium selenide (CdSe) is an n‐type direct bandgap II–VI group semiconductor with an absorption band edge of about 710 nm. Also, CdSe single crystal is widely used in infrared wave plates due to its over 70% transmission in the >710‐nm wavelength range 21 . These characters indicate that submicron thick CdSe can fully absorb incident light <710 nm and maintain good transmittance at >710 nm.…”

Section: Introductionmentioning

confidence: 99%

Filter‐free self‐power CdSe/Sb₂(S_1−x,Se_x)₃ nearinfrared narrowband detection and imaging

Yang

et al. 2021

InfoMat

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Accurate and clear bioimaging is crucial in the field of medical diagnosis. High‐quality bioimaging requires to avoid the effects of ambient light as well as the absorption of biological tissues. Nearinfrared (NIR) narrowband detectors located at wavelength from 650 to 900 nm can meet these requirements; thus, they are the potential solution. In this work, we construct a filter‐free and self‐power NIR narrowband photodetector based on the structure of n‐CdSe/p‐Sb2(S1‐x,Sex)3 heterojunction, and achieve a narrow spectral response at 735 nm with a full width at half‐maximum of 35.3 nm in the detector. Further, the imaging characteristics of the NIR narrowband detector are explored, verifying the ability to narrowband detection and imaging. This filter‐free and self‐power NIR narrowband detector shows considerable promise in real‐life applications.

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Optical-energy properties of CdSe thin film

Cited by 23 publications

References 19 publications

Effect of Al doping on optical properties of ZnO thin films: theory and experiment

Effect of Al doping on optical properties of ZnO thin films: theory and experiment

Optical and Dispersion Parameters of the Al-doped ZnO Thin Film

Filter‐free self‐power CdSe/Sb₂(S_1−x,Se_x)₃ nearinfrared narrowband detection and imaging

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Optical-energy properties of CdSe thin film

Cited by 23 publications

References 19 publications

Effect of Al doping on optical properties of ZnO thin films: theory and experiment

Effect of Al doping on optical properties of ZnO thin films: theory and experiment

Optical and Dispersion Parameters of the Al-doped ZnO Thin Film

Filter‐free self‐power CdSe/Sb2(S1−x,Sex)3 nearinfrared narrowband detection and imaging

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Product

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Filter‐free self‐power CdSe/Sb₂(S_1−x,Se_x)₃ nearinfrared narrowband detection and imaging