Filter‐free self‐power CdSe/Sb₂(S_1−x,Se_x)₃ nearinfrared narrowband detection and imaging

Abstract

Accurate and clear bioimaging is crucial in the field of medical diagnosis. High‐quality bioimaging requires to avoid the effects of ambient light as well as the absorption of biological tissues. Nearinfrared (NIR) narrowband detectors located at wavelength from 650 to 900 nm can meet these requirements; thus, they are the potential solution. In this work, we construct a filter‐free and self‐power NIR narrowband photodetector based on the structure of n‐CdSe/p‐Sb2(S1‐x,Sex)3 heterojunction, and achieve a narrow spectral response at 735 nm with a full width at half‐maximum of 35.3 nm in the detector. Further, the imaging characteristics of the NIR narrowband detector are explored, verifying the ability to narrowband detection and imaging. This filter‐free and self‐power NIR narrowband detector shows considerable promise in real‐life applications.

Fabrication and Optimization of CdSe Solar Cells for Possible Top Cell of Silicon‐Based Tandem Devices

“…The CdSe thin film was deposited on FTO substrates by RTE (Figure S14, Supporting Information, MTI, Hefei, China, OTF‐1200X‐RTP). [ 40 ] Specifically, the substrate temperature was set as 480 °C and held for 15 min, then the temperature of the RTE system rapidly rose to 820 °C within 20 s and held for 100 s to deposit the CdSe thin films. Graphite (100 mm × 60 mm× 20 mm) was used to keep the substrate temperature during the deposition process.…”

2D CdSe/CdS Core–Shell Nanoplatelets for High-Performance Photodetectors

“…8 Tang et al have developed a p−n junction photodetector based on CdSe/ Sb 2 (S 1−x ,Se x ) 3 films, which shows very narrow band NIR detection with a maximum responsivity of 0.19 A/W and detectivity of 2.05 × 10 11 Jones. 9 Recently, a CsPbBr 3 /CdS flake heterostructure-based photovoltaic device has also shown a very high detectivity of 3.67 × 10 10 Jones with a fast response rate of 84/23 μs. 10 II−VI semiconductor nanocrystals of two-dimensional nanoplatelets (NPLs) have been an object of intense research in the last decade.…”

Rapid thermal annealing process for Se thin-film solar cells

“…Rapid thermal annealing (RTA) is an effective method to obtain high-quality thin lms and has been widely applied in thin-lm devices. [19][20][21][22] Using this method, thin lms can reach a high temperature within seconds to grow grains and crystallize, obtaining high crystallinity and also avoiding unnecessary reaction processes. For Se thin lms, the RTA technique can provide the desired energy for crystallization, and meanwhile, the rapid heating treatment process can avoid sublimation because of the short annealing time.…”