Antimony chalcogenides are widely studied as a light-absorbing material due to their merits of low toxicity, efficient cost, and excellent photovoltaic properties. However, the band gaps of antimony selenide (approximately 1.1 eV) and antimony sulfide (approximately 1.7 eV) both deviate from the optimal detailed balance band gap (∼1.3 eV) for terrestrial single-junction solar cells. Notably, the band gap of Sb 2 (S, Se) 3 can be tunable in the range from 1.1 to 1.7 eV, which can cover the detailed balance band gap. In this work, the vapor transport deposition method with two independent evaporation sources is used to deposit Sb 2 (S, Se) 3 thin films. By carefully optimizing the evaporation temperature and the start evaporation time of the Sb 2 Se 3 and Sb 2 S 3 sources, a suitable band gap of 1.33 eV is obtained. Finally, on the basis of the optimal Sb 2 (S, Se) 3 films, Sb 2 (S, Se) 3 solar cells without a hole transport layer achieved an efficiency of 7.03%.

Scintillators are widely utilized as X‐ray imaging detectors. Pixelated scintillator films with optical‐waveguide‐effect are preferred to realize high‐resolution X‐ray imaging. However, it remains a great challenge to rapidly fabricate high‐resolution pixelated scintillator film. Herein, a new strategy is developed to solve the problem by embedding metal halide scintillators into an anodic aluminum oxide (AAO) via a facile hot‐pressing method. Cs3Cu2I5 is selected as the prototype to fabricate pixelated scintillator films with targeted thickness, denoted as Cs3Cu2I5−AAO. The light confinement effect provided by AAO is validated by finite‐difference time‐domain simulations. In particular, the as‐prepared Cs3Cu2I5−AAO film demonstrates higher spatial resolution (10.4 lp mm−1 at modulation transfer function = 0.2), higher UV and X‐ray imaging performances compared to the homogeneous counterpart and commercialized terbium‐doped gadolinium oxysulfide. These results can inspire further research on the design of nanostructured metal halide perovskites for high‐resolution X‐ray imaging.

Accurate and clear bioimaging is crucial in the field of medical diagnosis. High‐quality bioimaging requires to avoid the effects of ambient light as well as the absorption of biological tissues. Nearinfrared (NIR) narrowband detectors located at wavelength from 650 to 900 nm can meet these requirements; thus, they are the potential solution. In this work, we construct a filter‐free and self‐power NIR narrowband photodetector based on the structure of n‐CdSe/p‐Sb2(S1‐x,Sex)3 heterojunction, and achieve a narrow spectral response at 735 nm with a full width at half‐maximum of 35.3 nm in the detector. Further, the imaging characteristics of the NIR narrowband detector are explored, verifying the ability to narrowband detection and imaging. This filter‐free and self‐power NIR narrowband detector shows considerable promise in real‐life applications.