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A series of InxTl1−xI (x = 0.4−0.9) single crystalline solid state alloys were successfully synthesized by the vertical Bridgman method. For the first time the density functional theory based band structure calculations are performed and features of the band energy dispersion are discussed. Comparison with the experimental energy gap Eg obtained from the optical photoconductivity is discussed. An essential role of the localized defects and excitons in formation of the edge photoconductivity is analyzed. Relation between the crystal structure and photoconductivity of the materials studied is discussed. Also the origin of the principal valence and conduction bands is explored. Experimental measurements of the band gap Eg by the optical and photoconductivity methods have given opposite dependences with respect to the indium content x. Features of the photoconductivity spectra for different crystallographic directions have been discussed with taking into account the chemical bonds anisotropy.

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The optical constants and thickness of Al-doped ZnO (ZnO:Al(2.5 wt.%)) thin films prepared by high-frequency magnetron sputtering method are determined. ZnO:Al thin films are crystallized in the hexagonal structure from XRD studies. The optical constants and the bandgap of the films under study have been determined. Optical properties (refractive index [Formula: see text], absorption coefficient [Formula: see text], extinction coefficient [Formula: see text], dielectric functions [Formula: see text] and optical conductivity [Formula: see text]) of thin films and thickness [Formula: see text] can be determined from the transmission spectrum. The dispersion of the refractive index was explained using a single oscillator model. Single oscillator energy and dispersion energy are obtained from fitting. Optical parameters of the films were determined using the Cauchy, Sellmeier and Wemple models. The increasing value of dispersion parameter for polycrystalline thin films than for single crystals is observed. The fundamental absorption edge position (3.26 eV) in the transmittance spectrum of studied thin films corresponds to the values that are typical for ZnO:Al compound. No significant increase of the bandgap width was revealed by comparing ZnO:Al thin films with the known results of the optical studies of ZnO thin films. Possible reasons of such behavior were analyzed and the influence of bandgap increase on spectral behavior of optical functions are investigated. The material optical parameters such as normalized integrated transmission, zero and high-frequency dielectric constant, density of state effective mass ratio were also calculated.

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