Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers

Lu, Chien-Rong; Liu, Hsiang Lin; Lee, J.R.; Wu, Cheng‐Hsien; Lin, H. H.; Sung, Li Wei

doi:10.1016/j.jpcs.2005.09.059

Cited by 2 publications

(2 citation statements)

References 18 publications

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“…1. The resolved spectral features have been verified simultaneously by photoluminescence, reflectance and transmittance spectroscopies [11]. The strong internal electric field induced Franz-Keldysh oscillation (FKO) features above the band gap energy of GaAs are omitted for clear viewing of the quantum well transitions.…”

Section: Resultsmentioning

confidence: 96%

Electro‐modulation enhancement in the InGaNAs/GaAs quantum well structures

Lee¹,

Lu²,

Liu³

et al. 2008

Phys. Status Solidi (c)

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Electrooptical properties of InGaNAs/GaAs quantum well structures were investigated by photoreflectance spectroscopy. The MBE grown structures consist of a central InGaNAs well, GaAs barriers, and GaAsN strain compensating buffer layers of different thickness. More quantum states and extended wave functions in the system with strain relief GaAsN barriers due to broader and lower confinement profile. Particular electro‐modulated spectral features corresponding to excitonic interband transitions are enhanced. Compared with the numerically calculated quantum state energies and wave functions, the electromodulation enhanced transitions were those involving quantum states with wave functions distribute in wider regions and extend more from the InGaNAs well into the space charge region near interfaces. It was the internal electric field near the heterointerfaces strongly enhanced the electro‐modulation efficiency. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultsmentioning

confidence: 96%

Electro‐modulation enhancement in the InGaNAs/GaAs quantum well structures

Lee¹,

Lu²,

Liu³

et al. 2008

Phys. Status Solidi (c)

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“…[2][3][4] Previous research studies have reported the deterioration of the optical property and surface roughness in InGaAsN QWs grown after the Al-contained alloy in molecular beam epitaxy (MBE) 4) and metal-organic chemical vapor deposition (MOCVD) 2,3) systems. A few methods, such as those involving the use of an Al-free MBE system 5) and InGaP cladding layers, 6) and two-step growth, 7) have been proposed to solve this problem. However, the Al-free structure makes the fabrication of VCSELs very difficult, and two-step growth is time consuming.…”

mentioning

confidence: 99%

Performance Improvement of InGaAsN/GaAs Quantum Well Lasers by Using Trimethylantimony Preflow

Wan

Chen

et al. 2010

Appl. Phys. Express

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The performance characteristics of InGaAsN quantum well (QW) lasers with and without trimethylantimony (TMSb) preflow have been studied. The TMSb preflow before the growth of InGaAsN QWs can suppress the Al-contamination effect and decrease the threshold current density compared with conventional InGaAsN QW lasers without preflow. The photoluminescence (PL) intensity increased and linewidth decreased when TMSb flow rate increased. According to the atomic force microscopy (AFM) measurement, the surface roughness was also reduced significantly after TMSb treatment which manifested that the preflow prevented the Al and N precursors from reacting with each other and resulted in a higher optical quality in InGaAsN QWs.

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Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers

Cited by 2 publications

References 18 publications

Electro‐modulation enhancement in the InGaNAs/GaAs quantum well structures

Electro‐modulation enhancement in the InGaNAs/GaAs quantum well structures

Performance Improvement of InGaAsN/GaAs Quantum Well Lasers by Using Trimethylantimony Preflow

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