Performance Improvement of InGaAsN/GaAs Quantum Well Lasers by Using Trimethylantimony Preflow

Abstract

The performance characteristics of InGaAsN quantum well (QW) lasers with and without trimethylantimony (TMSb) preflow have been studied. The TMSb preflow before the growth of InGaAsN QWs can suppress the Al-contamination effect and decrease the threshold current density compared with conventional InGaAsN QW lasers without preflow. The photoluminescence (PL) intensity increased and linewidth decreased when TMSb flow rate increased. According to the atomic force microscopy (AFM) measurement, the surface roughness was also reduced significantly after TMSb treatment which manifested that the preflow prevented the Al and N precursors from reacting with each other and resulted in a higher optical quality in InGaAsN QWs.

Thermal dependence of the optical gain and threshold current density of GaInNAs/GaAs/AlGaAs quantum well lasers

“…[31][32][33][34] This implies that we can reduce the nonradiative monomolecular recombination in the GaInNAs QW by improving the crystalline quality of GaInNAs, and realize 1.3 lm high-performance GaInNAs QW lasers. [35][36][37][38][39] The Auger recombination is not the dominant recombination process while dominates the temperature sensitivity of the threshold current density. This is consistent with the experimental …”