“…Direct band gap thin film cadmium sulfide has been the subject of intensive research because of its intermediate band gap, high absorption coefficient, reasonable conversion efficiency and stability. Also it used in light amplifiers, radiation detectors, thin film transistor and diodes, piezoelectric transducers, laser materials and other optical devices [3,4].The interest in the nonlinear optical properties of semiconductors have become a subject of intensive research for their extraordinary properties compared to their bulk counterparts. The Z-scan method provides a sensitive and straightforward method for the determination of the nonlinear refractive index and the nonlinear absorption coefficient.…”
Section: mentioning
confidence: 99%
“…The effect of solar radiation and ultrasonic-cation on the various properties of thin films has been reported. Moreover, the effect of varying growth parameters, such as deposition rate, bath composition and bath temperature, on the various properties of thin films have also been reported by several workers.Normally, for obtaining CdS thin films by Chemical bath deposition -CBD-in aqueous solution ammonia is used as a base to adjust the [pH] value of solution, and a ligand to control the precipitation of chalcogenides and hydroxides [3,4].…”
In the present work, different thicknesses of CdS film were prepared by chemical bath deposition. Z-Scan technique was used to study the nonlinear refractive index and nonlinear absorption coefficients. Linear optical testing were done such as transmission test, and thickness of films were done by the interference fringes (Michelson interferometer). Z-scan experiment was performed at 650nm using CW diode laser and at 532nm wavelength. The results show the effect of self-focusing and defocusing that corresponds with nonlinear refraction n2. The effect of two-photon absorption was also studied, which correspond to the nonlinear absorption coefficient B.
“…Direct band gap thin film cadmium sulfide has been the subject of intensive research because of its intermediate band gap, high absorption coefficient, reasonable conversion efficiency and stability. Also it used in light amplifiers, radiation detectors, thin film transistor and diodes, piezoelectric transducers, laser materials and other optical devices [3,4].The interest in the nonlinear optical properties of semiconductors have become a subject of intensive research for their extraordinary properties compared to their bulk counterparts. The Z-scan method provides a sensitive and straightforward method for the determination of the nonlinear refractive index and the nonlinear absorption coefficient.…”
Section: mentioning
confidence: 99%
“…The effect of solar radiation and ultrasonic-cation on the various properties of thin films has been reported. Moreover, the effect of varying growth parameters, such as deposition rate, bath composition and bath temperature, on the various properties of thin films have also been reported by several workers.Normally, for obtaining CdS thin films by Chemical bath deposition -CBD-in aqueous solution ammonia is used as a base to adjust the [pH] value of solution, and a ligand to control the precipitation of chalcogenides and hydroxides [3,4].…”
In the present work, different thicknesses of CdS film were prepared by chemical bath deposition. Z-Scan technique was used to study the nonlinear refractive index and nonlinear absorption coefficients. Linear optical testing were done such as transmission test, and thickness of films were done by the interference fringes (Michelson interferometer). Z-scan experiment was performed at 650nm using CW diode laser and at 532nm wavelength. The results show the effect of self-focusing and defocusing that corresponds with nonlinear refraction n2. The effect of two-photon absorption was also studied, which correspond to the nonlinear absorption coefficient B.
“…Various deposition techniques such as spray pyrolysis [2], metal organic chemical vapour deposition (MOCVD) [3], and chemical bath deposition (CBD) [4] have been used to deposit Cadmium cobalt sulphide. However, the popularization of the chemical bath deposition (CBD) technique in recent decades for thin film deposition no doubt is due to its relatively low cost and simple method for the deposition of high quality and large area films [5][6][7], wider choice of materials to be used [4], and facilitates better orientation of crystallites with improved grain structure [5].…”
Cadmium Cobalt Sulphide (Cd x Co 1−x S) thin film was deposited on microscopic glass substrate using chemical bath deposition technique at room temperature from aqueous solutions of Cadmium Chloride, Cobalt Chloride and Thiourea in which ammonium solution was used as complexing agents. The optical properties were characterized using the absorbance and transmission measurement from Unico UV-2102 PC spectrophotometer, at normal incidence of light in the wavelength range of 200-1000 nm. We report the deposition and optimization of the growth parameter with respect to time which showed that the band gap energy and the composition verified from the extended Vegard's law are highly dependent on deposition time. The average transmittance of the film in VIS-NIR region ranges between 30% and 78% with absorbance range of 0.15-0.47 within the same wavelength range. The film was also observed to exhibit poor reflectance (11 < R% < 20) which declined albeit exponential within the entire studied wavelength range. From absorbance and transmittance spectra, the band gap energy determined for the film deposited at various time: 19 h, 21 h and 24 h are 2.25 eV, 2.17 eV and 2.05 eV respectively, in that order. The composition of the ternary system for 19 h; 21 h, and 24 h were found to be (x = 0.75; 0.83 and 0.94), respectively. Other optical and dielectric properties of the films were also characterized. Based on the exhibited properties of the film, it can be concluded that it is a promising material for selective coatings for solar cells; effective coatings for poultry houses; use as antireflective coating materials, and for fabrication of optoelectronic devices.
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