Optical bandgap engineering in nonlinear silicon nitride waveguides

Krückel, Clemens J.; Fülöp, Attila; Ye, Zhichao; Andrekson, Peter A.; Torres-Company, Víctor

doi:10.1364/oe.25.015370

Cited by 89 publications

(55 citation statements)

References 44 publications

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“…The difference between the losses at 1550 nm (Q i ¼ 350 000Þ and the losses at 1520 nm (Q i ¼ 190 000Þ can thus be estimated to be 0.9 dB/cm. This additional loss due to residual N-H absorption for our annealing-free process is comparable to the value (0.6 dB/ cm) inferred for high-temperature annealed Si 3 N 4 waveguides, 21 and as shown below, it does not preclude the oscillation and comb generation in the C-band.…”

supporting

confidence: 79%

“…By reducing the content of residual hydrogen 11,19 in the SiN film, the high tensile strain is a clear indication of the film stoichiometry. 19,21 In order to compare between the stoichiometry of films produced via our annealing-free process and by the standard LPCVD process including a long post-annealing step, we compared their respective tensile strains. The stress of our silicon nitride film is inferred by measuring the wafer bow, before and after removing the silicon nitride from the wafer back side.…”

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confidence: 99%

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Annealing-free Si3N4 frequency combs for monolithic integration with Si photonics

Dirani

Kamel

Casale

et al. 2018

Applied Physics Letters

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Silicon-nitride-on-insulator (SiNOI) is an attractive platform for optical frequency comb generation in the telecommunication band because of the low two-photon absorption and free carrier induced nonlinear loss when compared with crystalline silicon. However, high-temperature annealing that has been used so far for demonstrating Si3N4-based frequency combs made co-integration with silicon-based optoelectronics elusive, thus reducing dramatically its effective complementary metal oxide semiconductor (CMOS) compatibility. We report here on the fabrication and testing of annealing-free SiNOI nonlinear photonic circuits. In particular, we have developed a process to fabricate low-loss, annealing-free, and crack-free Si3N4 740-nm-thick films for Kerr-based nonlinear photonics featuring a full process compatibility with front-end silicon photonics. Experimental evidence shows that micro-resonators using such annealing-free silicon nitride films are capable of generating a frequency comb spanning 1300–2100 nm via optical parametrical oscillation based on four-wave mixing. This work constitutes a decisive step toward time-stable power-efficient Kerr-based broadband sources featuring full process compatibility with Si photonic integrated circuits on CMOS lines.

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confidence: 79%

mentioning

confidence: 99%

Annealing-free Si3N4 frequency combs for monolithic integration with Si photonics

Dirani

Kamel

Casale

et al. 2018

Applied Physics Letters

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“…For the SRN structure, the refractive index has higher values in the visible spectral range. A similar trend of n increase with the increasing N/Si atomic ratio of SiN x films has been shown in literature [13,[22][23][24]. It should be noted the anomal behavior of n for the SRN structure in the range of (200−300 nm).…”

supporting

confidence: 84%

Blue and red light-emitting non-stoichiometric silicon nitride-based structures

Romanov

Пархоменко

Власукова

et al. 2018

Vescì Akademìì navuk Belarusì. Seryâ fizika-matematyčnyh navuk

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The two triple-layered SiO 2 /SiN x /SiO 2 structures with Si-rich and N-rich silicon nitride active layer were fabricated on p-type Si-substrates by chemical vapour deposition. The SiN x layer of different composition (x = 0.9 and x = 1.4) was obtained by changing the ratio of the SiH 2 Cl 2 /NH 3 flow rates during deposition of a silicon nitride active layer (8/1 and 1/8, respectively). The spectroscopic ellipsometry and photoluminescence (PL) measurements showed that the refractive index, the absorbance and luminescence properties depend on a chemical composition of silicon nitride layers. The structures with Si-rich and N-rich SiN x active layers emit in the red (1.9 eV) and blue (2.6 eV) spectral ranges, respectively. The PL intensities of different structures are comparable. The rapid thermal annealing results in the intensity decrease and in the PL spectra narrowing in the case of SiN 1.4 active layer, whereas the increase in the emission intensity and the PL spectra broadening are observed in the case of the annealed sample with a SiN 0.9 active layer. The PL origin and the effect of annealing treatment have been discussed, taking into account the band tail mechanism of radiative recombination. Multilayered (SiO 2 /SiN x) n /Si structures are of practical interest for creation of effective light sources on the basis of current Si technology.

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“…Compared with silicon, the transparency window of SiN can be extended from visible to near infrared wavelengths of the C-band. Additionally, it has a considerably high Kerr nonlinearity, while does not suffer from the large TPA (two-photon absorption) effects at telecommunication wavelengths [7][8][9]. The low propagation loss combining with the advantages mentioned above makes SiN photonics a great platform in nonlinear optics application such as wavelength conversion, super-continuum generation, frequency comb generation and so on [1,[10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

“…The problem for the SiN film prepared by PECVD (usually with a gas mixture of SiH 4 , NH 3 and N 2 ) is it always has relatively large intrinsic absorption loss due to the dangling bonds of Si-H and N-H, which is formed during the deposition [18,19]. So far, many SiN based nonlinear optical waveguides have been proposed, but most of them are obtained from LPCVD [7,12,[20][21][22]28,30]. SiN waveguides grown by PECVD which have a similar optical linear and nonlinear performance are still rarely seen.…”

Section: Introductionmentioning

confidence: 99%

Nonlinear silicon nitride waveguides based on PECVD deposition platform

Wang¹,

Wang²,

Thourhout³

et al. 2018

Opt. Express

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In this work, we present a nonlinear silicon nitride waveguide. These waveguide are fabricated by readily available PECVD, conventional contact UV-lithography and high-temperature annealing techniques, thus dramatically reducing the processing complexity and cost. By patterning the waveguide structures firstly and then carrying out a high-temperature annealing process, not only sufficient waveguide thickness can be achieved, which gives more freedom to waveguide dispersion control, but also the material absorption loss in the waveguides be greatly reduced. The linear optical loss of the fabricated waveguide with a cross-section of 2.0 × 0.58 µm was measured to be as low as 0.58 dB/cm. The same loss level is demonstrated over a broad wavelength range from 1500 nm to 1630 nm. Moreover, the nonlinear refractive index of the waveguide was determined to be ~6.94 × 10 m/W, indicating that comparable nonlinear performance with their LPCVD counterparts is expected. These silicon nitride waveguides based on a PECVD deposition platform can be useful for the development of more complicated on-chip nonlinear optical devices or circuits.

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Optical bandgap engineering in nonlinear silicon nitride waveguides

Cited by 89 publications

References 44 publications

Annealing-free Si3N4 frequency combs for monolithic integration with Si photonics

Annealing-free Si3N4 frequency combs for monolithic integration with Si photonics

Blue and red light-emitting non-stoichiometric silicon nitride-based structures

Nonlinear silicon nitride waveguides based on PECVD deposition platform

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