Annealing-free Si3N4 frequency combs for monolithic integration with Si photonics

Dirani, Houssein El; Kamel, A. N.; Casale, Marco; Kerdilès, S.; Monat, Christelle; Letartre, Xavier; Pu, Minhao; Oxenløwe, Leif Katsuo; Yvind, Kresten; Sciancalepore, Corrado

doi:10.1063/1.5038795

Cited by 70 publications

(41 citation statements)

References 22 publications

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“…Traditionally, Si3N4 waveguide cores are defined via a subtractive method, where the Si3N4 film is lithographically patterned upon deposition on an oxidized silicon wafer [17][18][19][20]. Typically, uniformity of film thickness ~ 2% across a wafer can be achieved by low-pressure chemical vapor deposition (LPCVD) of Si3N4.…”

Section: Introductionmentioning

confidence: 99%

High-Q Si₃N₄ microresonators based on a subtractive processing for Kerr nonlinear optics

et al. 2019

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Microresonator frequency combs (microcombs) are enabling new applications in frequency synthesis and metrologyfrom high-speed laser ranging to coherent optical communications. One critical parameter that dictates the performance of the microcomb is the optical quality factor (Q) of the microresonator. Microresonators fabricated in planar structures such as silicon nitride (Si3N4) allow for dispersion engineering and the possibility to monolithically integrate the microcomb with other photonic devices. However, the relatively large refractive index contrast and the tight optical confinement required for dispersion engineering make it challenging to attain Si3N4 microresonators with Qs > 10 7 using standard subtractive processing methodsi.e. photonic devices are patterned directly on the asdeposited Si3N4 film. In this work, we achieve ultra-smooth Si3N4 microresonators featuring mean intrinsic Qs around 11 million. The cross-section geometry can be precisely engineered in the telecommunications band to achieve either normal or anomalous dispersion, and we demonstrate the generation of mode-locked dark-pulse Kerr combs as well as soliton microcombs. Such high-Qs allow us to generate soliton microcombs with photodetectable repetition rates, demonstrated here for the first time in Si3N4 microresonators fabricated using a subtractive processing method. These results enhance the possibilities for co-integration of microcombs with high-performance photonic devices, such as narrow-linewidth externalcavity diode lasers, ultra-narrow filters and demultiplexers.

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Section: Introductionmentioning

confidence: 99%

High-Q Si₃N₄ microresonators based on a subtractive processing for Kerr nonlinear optics

et al. 2019

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“…In conclusion, generating a wideband comb at telecom wavelengths using annealing-free silicon nitride nonlinear circuits featuring a full FEOL process compatibility with Si photonics is possible [18]. Via such demonstration, we claim the first-time realization of annealing-free silicon nitride frequency comb microresonators, following a tailored deposition method, minimizing the hydrogen content.…”

Section: Discussionmentioning

confidence: 78%

Optical frequency comb generation using annealing-free Si3N4 films for front-end monolithic integration with Si photonics

Dirani

Kamel

Casale

et al. 2019

Integrated Optics: Devices, Materials, and Technologies XXIII

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In this communication, we report on the design, fabrication and testing of silicon-nitride-in-insulator (SiNOI) nonlinear photonic circuits for comb generation in silicon photonics and optoelectronics. The low two-photon absorption when compared with crystalline silicon makes the SiNOI an attractive platform for frequency comb generation. Kerr combs have been recently used in terabit per second coherent communications demos. Such devices can overcome the intrinsic limitations of nowadays silicon photonics notably concerning the heterogenous integration of III-V on SOI lasers for both datacom and telecom applications. By using monolithically-integrated SiN-based Kerr frequency combs, the generation of tens or even hundreds of new optical frequencies can be obtained in dispersion tailored waveguides and resonators, thus providing an all-optical alternative to the heterointegration of hundreds of standalone III-V on Si lasers. However, in all the previous SiNOI-based frequency combs, the silicon nitride film is annealed under long and high temperature which made the cointegration with silicon based optoelectronics elusive. The annealing steps used in common SiN fabrication processes are not only incompatible with the front-end of line complementary metal-oxidesemiconductor processes, but also costly and long and thus an important cost factor in non-CMOS compatible processes. In our work, we present the fabrication and testing of an annealing-free and crack-free SiNOI. Notably, a 800-nmspanning (1300-2100 nm) frequency comb is generated using 740-nm-thick silicon nitride featuring full compatibility with silicon photonics integrated circuits. This work constitutes a new, decisive step toward time-stable power-efficient Kerr-based broadband sources featuring full process compatibility with Si photonic integrated circuits (Si-PICs) on CMOS-lines.

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“…To demonstrate the use of this platform for LIDAR applications, we used these building blocks to design an optical circuit comprising four small OPA circuits linked to a single optical input via a switching network, with which we demonstrated rudimentary two-dimensional beam steering at a fixed wavelength of λ = 905 nm (see Figure 6) [51]. In conclusion, these results [32] show that it is possible to generate a wideband comb at telecom wavelengths using annealing-free silicon nitride nonlinear circuits featuring a full FEOL process compatibility with Si photonics. Via such demonstration, we claim the first-time realization of annealing-free silicon nitride frequency comb microresonators, following a tailored deposition method, minimizing the hydrogen content.…”

Section: Sin For Near Infrared Lidarmentioning

confidence: 70%

“…To control strain and to prevent cracks from appearing, the silicon nitride layer is deposited via low-pressure chemical vapor deposition (LPCVD) in two steps of 370-nm-thick layers each [32]. The deposition is carried out with a tailored ultra-low deposition rate (<2 nm/min) to produce a very high-quality film.…”

Section: • Si 3 N 4 For Wideband Comb Generationmentioning

confidence: 99%

A Versatile Silicon-Silicon Nitride Photonics Platform for Enhanced Functionalities and Applications

et al. 2019

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Silicon photonics is one of the most prominent technology platforms for integrated photonics and can support a wide variety of applications. As we move towards a mature industrial core technology, we present the integration of silicon nitride (SiN) material to extend the capabilities of our silicon photonics platform. Depending on the application being targeted, we have developed several integration strategies for the incorporation of SiN. We present these processes, as well as key components for dedicated applications. In particular, we present the use of SiN for athermal multiplexing in optical transceivers for datacom applications, the nonlinear generation of frequency combs in SiN micro-resonators for ultra-high data rate transmission, spectroscopy or metrology applications and the use of SiN to realize optical phased arrays in the 800–1000 nm wavelength range for Light Detection And Ranging (LIDAR) applications. These functionalities are demonstrated using a 200 mm complementary metal-oxide-semiconductor (CMOS)-compatible pilot line, showing the versatility and scalability of the Si-SiN platform.

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Annealing-free Si3N4 frequency combs for monolithic integration with Si photonics

Cited by 70 publications

References 22 publications

High-Q Si₃N₄ microresonators based on a subtractive processing for Kerr nonlinear optics

High-Q Si₃N₄ microresonators based on a subtractive processing for Kerr nonlinear optics

Optical frequency comb generation using annealing-free Si3N4 films for front-end monolithic integration with Si photonics

A Versatile Silicon-Silicon Nitride Photonics Platform for Enhanced Functionalities and Applications

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Annealing-free Si3N4 frequency combs for monolithic integration with Si photonics

Cited by 70 publications

References 22 publications

High-Q Si3N4 microresonators based on a subtractive processing for Kerr nonlinear optics

High-Q Si3N4 microresonators based on a subtractive processing for Kerr nonlinear optics

Optical frequency comb generation using annealing-free Si3N4 films for front-end monolithic integration with Si photonics

A Versatile Silicon-Silicon Nitride Photonics Platform for Enhanced Functionalities and Applications

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High-Q Si₃N₄ microresonators based on a subtractive processing for Kerr nonlinear optics

High-Q Si₃N₄ microresonators based on a subtractive processing for Kerr nonlinear optics