Optical Anisotropy of ZnSe/BeTe Superlattices Probed by Excitonic Spectroscopy

Platonov, A. V.; Кочерешко, В. П.; Ivchenko, E. L.; Yakovlev, D. R.; Ossau, W.; Fischer, F.; Waag, A.; Landwehr, G.

doi:10.12693/aphyspola.94.479

Cited by 8 publications

(3 citation statements)

References 7 publications

(12 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is supported by observations of high linear polarization of the PL in unbiased InAs/AlSb and ZnSe/BeTe multiple QW's ͑MQW's͒. 7,8 In this paper, we study the temperature-and incident-power dependencies of the inplane polarization of the PL in ZnSe/BeTe MQW's in order to clarify whether the observed polarization is induced by localization of carriers at anisotropic defects and interface imperfections, or whether it is an intrinsic property of the heterostructure, which is retained under delocalization of carriers.…”

supporting

confidence: 52%

Orientation of chemical bonds at type-II heterointerfaces probed by polarized optical spectroscopy

et al. 2000

Self Cite

View full text Add to dashboard Cite

Time-resolved and cw photoluminescence ͑PL͒ spectra are studied in type-II ZnSe/BeTe multiple quantum wells. Samples with nonequivalent interfaces exhibit a strong in-plane linear polarization of the PL along a ͗110͘ axis. The polarization is stable with respect to an increase in the excitation intensity by many orders of magnitude, to a raising of the temperature up to 300 K and not influenced by applied electric or magnetic fields. The experimental data are discussed in the framework of a tight-binding model taking into account a type-II band alignment and lack of common atom in the ZnSe/BeTe heterosystem.

show abstract

supporting

confidence: 52%

Orientation of chemical bonds at type-II heterointerfaces probed by polarized optical spectroscopy

et al. 2000

Self Cite

View full text Add to dashboard Cite

show abstract

“…Type-II semiconductor heterostructures are very promising systems both for fundamental research and in terms of potential applications, since their spatially indirect optical transitions can be controlled well by an electric field [1,2]. Furthermore, the properties of the electron and hole states can be designed far more independently than in the case of type-I structures, where the electron and the hole are both in the same layer.…”

Section: Introductionmentioning

confidence: 99%

Electric- and magnetic-field effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells

Mino

Oto

et al. 2005

Semicond. Sci. Technol.

View full text Add to dashboard Cite

We have studied the photoluminescence properties of modulation n-doped ZnSe/BeTe/ZnSe type-II quantum wells. The luminescence spectra and the polarization anisotropy depend strikingly on both the n-doping into the barrier layers and an applied external electric field perpendicular to the layers. These are explained by screening of a built-in electric field with n-doping and Stark effects due to the applied electric field. We find optical Shubinkov-de Hass oscillations in both the photoluminescence intensity and the transition energy under a high magnetic field perpendicular to the well. These features and additional infrared cyclotron-resonance measurements demonstrate that two-dimensional electron gas of a high concentration has been formed in the doped samples. All these present the signature of the charged excitons and also of a correlated excitonic phase of type-II quantum wells.

show abstract

“…However, under special conditions it can reveal itself, e.g., through a linear polarization of vertically emitted radiation. Such is the case in the presence of an electric field applied normal to the plane of the well (the quantum confined Pockels effect [1][2][3]) or in asymmetric QW's with different profiles of nonabrupt normal and inverted interfaces, and/or for heteropairs with no common atoms, e.g., InAs͞AlSb and ZnSe͞BeTe, with different kinds of chemical bonds at the abrupt interfaces [4][5][6][7][8][9][10].…”

mentioning

confidence: 99%

Hidden In-Plane Anisotropy of Interfaces in Zn(Mn)Se/BeTe Quantum Wells with a Type-II Band Alignment

Yakovlev

Platonov

et al. 2002

Phys. Rev. Lett.

Self Cite

View full text Add to dashboard Cite

Circularly and linearly polarized radiation due to spatially indirect optical transitions is studied in semimagnetic (Zn,Mn)Se/BeTe and nonmagnetic ZnSe/BeTe quantum-well structures with a type-II band alignment. Because of the giant in-plane anisotropy of the optical matrix elements related to a particular interface, complete spin orientation of photocarriers induced by magnetic fields leads not to purely circular but instead to elliptical polarization of the luminescence. From comparison between theory and experiment the parameter of optical anisotropy of a ZnSe/BeTe interface is evaluated. The developed theoretical approach can be applied for the large class of nanostructures revealing optical anisotropy.

show abstract

Optical Anisotropy of ZnSe/BeTe Superlattices Probed by Excitonic Spectroscopy

Cited by 8 publications

References 7 publications

Orientation of chemical bonds at type-II heterointerfaces probed by polarized optical spectroscopy

Orientation of chemical bonds at type-II heterointerfaces probed by polarized optical spectroscopy

Electric- and magnetic-field effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells

Hidden In-Plane Anisotropy of Interfaces in Zn(Mn)Se/BeTe Quantum Wells with a Type-II Band Alignment

Contact Info

Product

Resources

About