Optical and structure properties of amorphous Ge–Sb–Se films for ultrafast all-optical signal processing

Chumakov, Yu. M.; Xu, Tao; Shen, Xiang; Wang, Rongping; Shuang-Fei, Zong; Dai, Shixun; Nie, Qiuhua

doi:10.1016/j.jallcom.2013.07.165

Cited by 28 publications

(14 citation statements)

References 39 publications

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“…Therefore, one can conclude that in our (co-)sputtered amorphous chalcogenide thin films, the Kerr indices are of two to three orders of magnitude higher than those obtained for silica or silicon nitride materials. These values are also in excellent agreement with previous experimental results reported for similar Ge 1-x-y Sb x Se y , Ge 1-x-y Sb x S y compounds 38 , 63 – 65 as well as those deduced using the Sheik–Bahae model for Ge 1-x S x and Ge 1-x-y Sb x Se y glasses 49 , 66 .…”

Section: Resultssupporting

confidence: 92%

“…In previous works, only positive experimental n 2 values were observed in the transparency window of chalcogenide glasses 61 , 67 . Nevertheless, negative Kerr indices values were reported in Ge 1-x-y Sb x Se y glasses at 800 nm 66 where absorption starts to be non-negligible. Therefore, we can emphasize that the negative Kerr indices values at 1.55 µm (~ 0.8 eV) are found for co-sputtered films for which the optical band gap energy is below 1.6 eV and as a result when TPA becomes significant.…”

Section: Resultsmentioning

confidence: 99%

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Ge–Sb–S–Se–Te amorphous chalcogenide thin films towards on-chip nonlinear photonic devices

Dory

Castro-Chavarria

Verdy

et al. 2020

Sci Rep

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Thanks to their unique optical properties Ge–Sb–S–Se–Te amorphous chalcogenide materials and compounds offer tremendous opportunities of applications, in particular in near and mid-infrared range. This spectral range is for instance of high interest for photonics or optical sensors. Using co-sputtering technique of chalcogenide compound targets in a 200 mm industrial deposition tool, we show how by modifying the amorphous structure of GeSb w S x Se y Te z chalcogenide thin films one can significantly tailor their linear and nonlinear optical properties. Modelling of spectroscopic ellipsometry data collected on the as-deposited chalcogenide thin films is used to evaluate their linear and nonlinear properties. Moreover, Raman and Fourier-transform infrared spectroscopies permitted to get a description of their amorphous structure. For the purpose of applications, their thermal stability upon annealing is also evaluated. We demonstrate that depending on the GeSb w S x Se y Te z film composition a trade-off between a high transparency in near- or mid-infrared ranges, strong nonlinearity and good thermal stability can be found in order to use such materials for applications compatible with the standard CMOS integration processes of microelectronics and photonics.

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Section: Resultssupporting

confidence: 92%

Section: Resultsmentioning

confidence: 99%

Ge–Sb–S–Se–Te amorphous chalcogenide thin films towards on-chip nonlinear photonic devices

Dory

Castro-Chavarria

Verdy

et al. 2020

Sci Rep

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“…Moreover, the heteropolar Sb-Se and Ge-Se bonds vibrational modes have close position at 190 cm -1 and 200 cm -1 , respectively [5,38]. The distinct peak around 168 cm -1 can be connected with formation of Ge-Ge bonds by crosslinked Ge atoms in the Ge 2 Se 6/2 chains (Se 3 Ge-GeSe 3 units) [5,40,41]. We are convinced that these modes are responsible for forming the complex band as IR active due to the lack of symmetry in our amorphous samples, as it was obtained by FTIR transmission measurements in [10,21].…”

Section: However With Increasing Sb Content the Ge-se Coordination Nmentioning

confidence: 94%

“…Bands in the FTIR spectra, located in the 250-320 cm -1 region ( Figure 6) have very low intensity and a tendency to vanish by increasing the Ge at.% and decreasing the Sb at.%, respectively. They may be attributed to several vibrations of Se-Se, Ge-Ge, and Ge-Sb bonds in modified GeSe 4structural units [21,38,41].…”

Section: However With Increasing Sb Content the Ge-se Coordination Nmentioning

confidence: 99%

Investigation of the Atomic Structure of Ge-Sb-Se Chalcogenide Glasses

Fábián

Dulgheru

Antonova

et al. 2018

Advances in Condensed Matter Physics

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at. %) have been synthesized. Neutron and X-ray diffraction techniques were used to study the atomic glassy structure, and Reverse Monte Carlo (RMC) simulations were applied to model the 3-dimensional atomic configurations and thorough mapping of the atomic parameters, such as first and second neighbour distances, coordination numbers, and bond-angle distributions. The results are explained with formation of GeSe 4 and SbSe 3 structural units, which correlate with the Ge/Sb ratio. For all the studied compositions, the Ge-Se, Sb-Se, Ge-Ge, and Se-Se bonds are significant. RMC simulations reveal the presence of Ge-Sb and Sb-Sb bonds, being dependent on Ge/Sb ratio. All atomic compositions satisfy formal valence requirements, i.e., Ge is fourfold coordinated, Sb is threefold coordinated, and Se is twofold coordinated. By increasing the Sb content, both the Se-Ge-Se bonds angle of 107±3 ∘ and Se-Sb-Se bonds angle of 118±3 ∘ decrease, respectively, indicating distortion of the structural units. Far infrared Fourier Transform spectroscopic measurements conducted in the range of 50-450 cm -1 at oblique (75 ∘ ) incidence radiation have revealed clear dependences of the IR band's shift and intensity on the glassy composition, showing features around x=27 at.% supporting the topological phase transition to a stable rigid network consisting mainly of SbSe 3 pyramidal and GeSe 4 tetrahedral clusters. These results are in agreement with the Reverse Monte Carlo models, which define the Ge and Sb environment.

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“…The Se 3d core level spectra presents a main component located from 53.47 to 53.78 eV depending on composition which can be attributed to the (Ge,Sb)– Se –(Ge,Sb) entities (Table ). The second doublet, located from 54.02 to 54.35 eV, is assigned to the Se– Se –(Ge,Sb) entities . A very slight shift towards lower energies was observed for PLD films with the introduction of antimony as shown in Figure B.…”

Section: Resultsmentioning

confidence: 88%

X‐ray photoelectron spectroscopy analysis of Ge–Sb–Se pulsed laser deposited thin films

et al. 2018

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Pulsed laser deposition was used to prepare amorphous thin films from (GeSe 2 ) 100Àx (Sb 2 Se 3 ) x system (x = 0, 5, 10, 20, 30, 40, 50, and 60). From a wide variety of chalcogenide glass-forming systems, Ge-Sb-Se one, especially in thin films form, already proved to offer a great potential for photonic devices such as chemical sensors. This system has a large glass-forming region which gives the possibility to adjust the chemical composition of the glasses according to required physical characteristics. The chemical composition of fabricated thin films was analyzed via X-ray photoelectron spectroscopy (XPS) and compared to energy dispersive spectroscopy (EDS) data. The results of both techniques agree well: a small deficiency in chalcogen element and an excess of antimony was found. The structure of as-deposited thin films has been investigated by XPS. The presence of the two main structural units, [GeSe 4 ] and [SbSe 3 ] proposed by Raman scattering spectroscopy data analysis, was confirmed by XPS. Moreover, XPS core level spectra analysis revealed the presence of M-M bonds (M = Ge, Sb) in (Ge,Sb)-Ge-(Se) 3 and (Ge,Sb)-Sb-(Se) 2 entities that could correspond to Ge-based tetrahedra and Sb-based pyramids where one of its Se atoms at corners is substituted by Ge or Sb ones. The content of depicted M-M bonds tends to increase with introduction of antimony in the amorphous network of as-deposited thin films from x = 0 to x = 40 and then it decreases. XPS analysis of as-deposited thin films shows also the presence of the (Ge,Sb)-Se-(Ge,Sb) and Se-Se-(Ge,Sb) entities.

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Optical and structure properties of amorphous Ge–Sb–Se films for ultrafast all-optical signal processing

Cited by 28 publications

References 39 publications

Ge–Sb–S–Se–Te amorphous chalcogenide thin films towards on-chip nonlinear photonic devices

Ge–Sb–S–Se–Te amorphous chalcogenide thin films towards on-chip nonlinear photonic devices

Investigation of the Atomic Structure of Ge-Sb-Se Chalcogenide Glasses

X‐ray photoelectron spectroscopy analysis of Ge–Sb–Se pulsed laser deposited thin films

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