Optical and structural properties of ZnO for transparent electronics

Logothetidis, S.; Laskarakis, A.; Kassavetis, S.; Lousinian, S.; Gravalidis, C.; Kiriakidis, G.

doi:10.1016/j.tsf.2007.03.171

Cited by 76 publications

(37 citation statements)

References 19 publications

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“…The plots of ( ℎ]) 2 versus ℎ] are shown in Figure 8. The plot shows better fit for = 1/2 indicating the direct transition of electron in ZnO [22][23][24]. The energy gap of the films is 3.02 eV, and it increases with the increase of molybdenum concentration due to the Burstein-Moss shift [25].…”

Section: Optical Propertiesmentioning

confidence: 94%

Preparation and Characterization of R.F. Magnetron Sputtered Mo:ZnO Thin Films

Srinivasarao

Madhuri

et al. 2013

Indian Journal of Materials Science

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The ZnO and Mo:ZnO thin films were deposited by radio frequency magnetron sputtering on quartz and intrinsic silicon (100) substrates at a fixed combined partial pressure 1×10 −2 mbar of Ar + O 2 and substrate temperatures of 473 K and 673 K. The effect of Molybdenum doping on ZnO thin films with different Molybdenum concentrations (1-2 atomic percent) was studied with the help of structural and microstructural characterization techniques. The films deposited at a substrate temperature of 473 K exhibited strong -axis orientation with predominant (002) peak. At 673 K, along with (002) orientation, other orientations (100), (101), (220), and (103) were also observed. Among these, the (220) peak indicates the cubic phase of ZnO. With increasing Molybdenum concentration, the cubic phase of ZnO disappeared, and the (002) orientation became strong and intense. The composition analysis reveals that the undoped ZnO films deposited at 473 K have oxygen deficiency, and the ratio of Zn/O is improved with increasing Mo atomic percent in ZnO. The surface morphological features reveal that the undoped ZnO films were found to be uniform and have grain size of around 30 nm. The optical energy gap of the undoped ZnO films is 3.05 eV and increases with increasing Mo concentration. The thickness of the films is around 456 nm.

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Section: Optical Propertiesmentioning

confidence: 94%

Preparation and Characterization of R.F. Magnetron Sputtered Mo:ZnO Thin Films

Srinivasarao

Madhuri

et al. 2013

Indian Journal of Materials Science

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“…9. The plots show better fit for n = 1/2 which shows the direct transition of electron in ZnO [23][24][25]. The energy gap of the films is 3.3 eV and it decreases with increase of substrate temperature.…”

Section: Optical Propertiesmentioning

confidence: 89%

Physical investigations on pulsed laser deposited nanocrystalline ZnO thin films

et al. 2012

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The nanocrystalline ZnO thin films were deposited by pulsed laser deposition on quartz and i-Si (100) substrates at different substrate temperatures (473 K-873 K) and at different mixed partial pressures (0.05, 0.01, and 0.5 mbar) of Ar + O 2 . The structural studies from XRD spectra reveals that the films deposited at 0.05 mbar and at lower substrate temperatures were c-axis oriented with predominant (002) crystallographic orientation. At 873 K along with (002) orientation, additional crystallographic orientations were also observed in case of films deposited at 0.01 and 0.5 mbar pressures. The composition of Zinc and Oxygen in ZnO films from EDAX reveals that the films deposited at lower partial pressures were have high at.% of O 2 whereas higher partial pressures and substrate temperatures had high at.% Zn. The surface microstructure of the films show that the films deposited at lower partial pressures (0.05 mbar ) and at lower substrate temperatures (473 K) were found to have nanoparticles of size 15 nm where as films deposited at 873 K have nanorods. The length of these nanorods increases with increasing Ar + O 2 partial pressure to 0.5 mbar. The optical energy gap of the film deposited at lower partial pressure and substrate temperature was 3.3 eV and decrease with the increase of substrate temperatures. The films deposited at 0.5 mbar and at 873 K emitted an intense luminescence at a wavelength of 390 nm. The mea-K. Srinivasarao ( ) · K. Pandurangarao Post graduate department of Physics, P.G. Centre, P.B. Siddartha

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“…Zinc oxide (ZnO) is a binary transparent conducting oxide (TCO) with properties of great interest due to their basic scientific research and potential technological applications [1][2][3][4][5][6]. ZnO has a würzite crystalline structure (lattice spacing a 0 ¼ 3:24 A and c 0 ¼ 5:20 A ).…”

Section: Introductionmentioning

confidence: 99%

Investigation of the annealing effects on the structural and optoelectronic properties of RF-sputtered ZnO films studied by the Drude–Lorentz model

García-Méndez¹,

Bedoya-Calle²,

Segura³

et al. 2015

Appl. Phys. A

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Zinc oxide films were deposited on glass substrates by RF reactive magnetron sputtering and post-annealed in vacuum at 100, 200, and 300 8C. Structural and optical properties of films were obtained using X-ray diffraction and UV-visible spectroscopy. Optical parameters were extracted from transmittance curves using the single-oscillator Drude-Lorentz model. The evolution of the optical and structural properties of films with the annealing process was investigated. The films crystallized into the hexagonal würzite lattice structure, with preferential growth along the c-axis [0002]. The results indicate that the crystalline quality of films improved with annealing, whereas transparency was reduced from 90 to 80 % at 300 8C. With post-annealing, the absorption edge shifted to the red, while the optical band gap decreased from E g ¼ 3:28 to E g ¼ 3:26 eV because of the Burstein-Moss effect. Calculated values of plasma frequency, w p ; fall within the IR range and decrease with temperature, from w p ¼ 5:56 Â 10 14 rad/s (2950 cm À1 ) to w p ¼ 1:1 Â 10 14 rad/s (587 cm À1 ).

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Optical and structural properties of ZnO for transparent electronics

Cited by 76 publications

References 19 publications

Preparation and Characterization of R.F. Magnetron Sputtered Mo:ZnO Thin Films

Preparation and Characterization of R.F. Magnetron Sputtered Mo:ZnO Thin Films

Physical investigations on pulsed laser deposited nanocrystalline ZnO thin films

Investigation of the annealing effects on the structural and optoelectronic properties of RF-sputtered ZnO films studied by the Drude–Lorentz model

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