2015
DOI: 10.1007/s00339-015-9318-6
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Investigation of the annealing effects on the structural and optoelectronic properties of RF-sputtered ZnO films studied by the Drude–Lorentz model

Abstract: Zinc oxide films were deposited on glass substrates by RF reactive magnetron sputtering and post-annealed in vacuum at 100, 200, and 300 8C. Structural and optical properties of films were obtained using X-ray diffraction and UV-visible spectroscopy. Optical parameters were extracted from transmittance curves using the single-oscillator Drude-Lorentz model. The evolution of the optical and structural properties of films with the annealing process was investigated. The films crystallized into the hexagonal würz… Show more

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Cited by 12 publications
(8 citation statements)
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“…This result reveals that all the obtained films are of pure phase composition and have a preferential c-axis growth orientation. 22 And with the increase in SGP, the relative intensity of (002) peak increased initially and then decreased, in which that of the films deposited under the SGP of 1.0 Pa was the strongest.
4 XRD patterns for the zinc oxide films deposited under different SGPs
…”
Section: Resultsmentioning
confidence: 92%
“…This result reveals that all the obtained films are of pure phase composition and have a preferential c-axis growth orientation. 22 And with the increase in SGP, the relative intensity of (002) peak increased initially and then decreased, in which that of the films deposited under the SGP of 1.0 Pa was the strongest.
4 XRD patterns for the zinc oxide films deposited under different SGPs
…”
Section: Resultsmentioning
confidence: 92%
“…For regions λ > λ ps , an almost constant transmittance or transparent zone is expected. A drop in the transmittance is expected in the IR region at the onset of vibrational modes in the lattice [19,20].…”
Section: Optoelectronical Characterizationmentioning
confidence: 98%
“…Applying the singleoscillator model developed by Wemple and Domenico, ε ∞ (dielectric constant, real part, at high-frequency values, for electronic transitions) and ε 0 (static constant, real part, at low-frequency values, related to the lattice contribution) were extracted [19]. A detailed procedure about how to use these models has been published by us elsewhere [20].…”
Section: Optoelectronical Characterizationmentioning
confidence: 99%
“…At the onset of the absorption edge, the optical band gap ( E g ) can be obtained through Tauc curves. Details about this method have been described [41]. In these curves, a graph of (αE) 2 (eV 2 cm −2 ) versus E (eV) is constructed.…”
Section: Deposition Of Azo Films On Fibers and Coating Characterizmentioning
confidence: 99%
“…Concerning the values of E g found for the samples, no meaningful difference existed among them. In an earlier work, values of E g ~3.2 eV were obtained for RF-grown ZnO films using the same equipment used to grow the current AZO films [41]. For AZO films prepared with RF and DC sputtering techniques, authors report that values of E g showed variations dependent on the deposition conditions.…”
Section: Deposition Of Azo Films On Fibers and Coating Characterizmentioning
confidence: 99%