Optical and photoluminescence properties of Ga doped ZnO nanostructures by sol-gel method

Abstract

Zinc oxide (ZnO) nanocrystallites with different Ga-doping levels were successfully prepared by spin coating sol-gel technique. The morphological properties of Ga doped ZnO films were studied by atomic force microscopy (AFM). Alignment of ZnO nanorods with respect to the substrate depends on the amount of Ga dopant content. The dopant content varies from 1 % to 4 %, based on Ga-doping levels. The optical properties of the ZnO nanocrystallites following Ga-doping were also investigated by UV-Visible absorption and Photoluminescence spectra. Our results indicate that Gadoping can change the energy-band structure and effectively adjust the intensity of the luminescence properties of ZnO nanocrystallites. Transmittance spectra of the films indicate that the films have high transparency. The refractive index dispersion was analyzed by single oscillator model developed by Wemple and DiDomenico. The oscillator energy, dispersion energy, high frequency dielectric constant values for the films were determined were calculated and it is found that the optical parameters are changed with Ga-doping content.

Synthesis of Ga-Doped ZnO Nanorods by Hydrothermal Method and Their Application to Ultraviolet Photodetector

“…The crystal structure of GZO nanorods indicated a reduced crystallite quality of the ZnO nanorods (NRs) due to the incorporation of Ga atoms into the ZnO lattice network [17][18][19], and our PL spectra results are in agreement with previous reports suggesting that Ga doping improves the optical properties of ZnO NR arrays [14,20] . Inventions 2016, 1, 3 4 of 6 zinc, 56.33% oxygen and 3.57% gallium as shown in Table 1.…”

Microwave-assisted hydrothermal synthesis and characterization of ZnO nanorods

“…9 declares that both of the real and imaginary dielectric spectra have non-monotonic variation especially ߝ ଵ variation that is more pronounced than ߝ ଶ . This trend can be explained by existence of some interactions between photons and electrons within the sample are produced in this energy range [33].…”

“…This anomalous behavior can be attributed to the resonance effect between the incident electromagnetic radiation and the electrons polarization, which leads to the coupling of electrons in ZnO sample to the oscillating electric field [33].…”

Effect of zinc addition and vacuum annealing time on the properties of spin-coated low-cost transparent conducting 1 at% Ga–ZnO thin films

“…Ga is chosen as a dopant due to its poor reactivity and being oxidation resistant. The effects of Ga doping in spin coated ZnO thin films have been studied earlier also but by using 2-methoxyethanol as precursor solvent, mono-ethanolamine (MEA) as stabilizer and varying annealing conditions (namely temperature: 450–650 °C; time: 45–90 min; atmosphere: air alone or with forming gas (95% N 2 + 5% H 2 ) or (95.8% N 2 + 4.2% H 2 )) in two steps [21–25]. Although the lowest electrical resistivity achieved falls in the range of 3.3 × 10 −3 –4.49 × 10 −2 Ω cm, it is reported without advancing any explanation [21, 22, 24].…”