Zinc oxide is a low cost and practical II–VI chemical material, which is utilized to absorb silver (Ag) nanoparticles (NPs) on zinc oxide nanosheets (ZnO NSs). Using the Ag NP-decorated ZnO NSs can improve the electrical characteristics of zinc oxide. Field electron emission characteristics of ZnO NSs and Ag–ZnO NSs indicate the turn-on fields were 5.3 and 3.2 V/μm in the dark, whereas the turn-on field were 4.3 and 2 V/μm under UV light, respectively. In addition, the field electron emission characteristics of ZnO NSs and Ag–ZnO NSs indicate the enhanced field enhancement factors were 3002 and 3420 in the dark and 3276 and 4815 under UV light, respectively.

The fabrication of Ga-doped zinc oxide (GZO) nanosheets on a glass substrate was done using the aqueous solution method. A GZO nanosheet metal-semiconductor-metal ultraviolet (UV) photodetector (PD) was also fabricated. The average length and diameter of the GZO nanosheets were 1.28 µm and ∼19 nm, respectively. The energy dispersive X-ray spectrum determined that the Ga-doped sample contains ∼1.35% at.%. The UV-to-visible rejection ratio of the sample is ∼36.1 when biased at 1 V, and the fabricated UV PD is visibleblind with a sharp cutoff at 370 nm. The photocurrent and dark-current constant ratio of the fabricated PD was ∼14 193 when biased at 1 V. The transient time constants measured during the rise time and the fall time were 2.45 and 4 s, respectively. Index Terms-Ga-doped zinc oxide (GZO) nanosheet, photodetector (PD).

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This study presents the fabrication of ZnO nanosheets on a glass substrate using a room-temperature (approximately 25 • C) solution method. The average length and diameter of the ZnO nanosheets were 1.2 μm and approximately 5 nm, respectively. The ultraviolet (UV)-to-visible rejection ratio of the sample is approximately 42 when biased at 1 V, and the fabricated UV photodetector is visible-blind with a sharp cutoff at 370 nm. The transient time constants measured during the rise time and fall time were τ r = 5.37 s and 6.02 s, respectively. The low-frequency noise spectra obtained from the UV photodetector were caused purely by the 1/f noise. The noise-equivalent power and normalized detectivity (D * ) of the ZnO nanosheet photodetector were 6.12 × 10 −9 W and 2.17 × 10 9 cm·Hz 0 .5 W −1 , respectively.

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