Optical and photoelectrical properties of nanocrystalline indium oxide with small grains

Форш, Е. А.; Abakumov, Artem M.; Зайцев, В. Б.; Константинова, Е. А.; Форш, П. А.; Rumyantseva, M. N.; Гаськов, А.М.; Кашкаров, П. К.

doi:10.1016/j.tsf.2015.10.053

Cited by 35 publications

(26 citation statements)

References 26 publications

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“…In our samples the defects like dangling bonds (indium and zinc vacancies) 21,27–29 and oxygen molecules can be such recombination centers. In our previous work 23 we showed that the photoconductivity of nanocrystalline indium oxide strongly depends on the oxygen molecules adsorbed on the surface.…”

Section: Resultsmentioning

confidence: 95%

“…Excitation of nonequilibrium carriers under illumination should be monopolar, as the energy of green light photons is smaller than band gap values of ZnO and In 2 O 3 21–23 . Nonequilibrium charge carriers can be excited from either localized states in the band gap or surface states, which are presented in nanocrystalline ZnO and In 2 O 3 in high concentrations.…”

Section: Resultsmentioning

confidence: 99%

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Green light activated hydrogen sensing of nanocrystalline composite ZnO-In2O3 films at room temperature

Ilin

Иким

Форш

et al. 2017

Sci Rep

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The possibility of reducing the operating temperature of H2 gas sensor based on ZnO-In2O3 down to room temperature under green illumination is shown. It is found that sensitivity of ZnO-In2O3 composite to H2 nonmonotonically depends on the oxides’ content. The optimal ratio between the components is chosen. The new mechanism of nanocrystalline ZnO-In2O3 sensor sensitivity to H2 under illumination by green light is proposed. The mechanism considers the illumination turns the composite into nonequilibrium state and the photoconductivity change in the H2 atmosphere is linked with alteration of nonequilibrium charge carriers recombination rate.

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Section: Resultsmentioning

confidence: 95%

Section: Resultsmentioning

confidence: 99%

Green light activated hydrogen sensing of nanocrystalline composite ZnO-In2O3 films at room temperature

Ilin

Иким

Форш

et al. 2017

Sci Rep

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“…It has been shown in [ 12 , 35 , 64 ] that, under dark conditions, the adsorption of NO 2 on the surface of semiconductor oxides proceeds irreversibly at room temperature. Thus, when NO 2 is removed from the atmosphere, its desorption from the surface of the semiconductor oxide does not occur.…”

Section: Resultsmentioning

confidence: 99%

Photosensitive Organic-Inorganic Hybrid Materials for Room Temperature Gas Sensor Applications

et al. 2018

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In this work, the hybrids based on nanocrystalline SnO2 or In2O3 semiconductor matrixes and heterocyclic Ru(II) complex are studied as materials for gas sensors operating at room temperature under photoactivation with visible light. Nanocrystalline semiconductor oxides are obtained by chemical precipitation with subsequent thermal annealing and characterized by XRD, SEM and single-point BET methods. The heterocyclic Ru(II) complex is synthesized for the first time and investigated by 1H NMR, 13C NMR APT, MALDI-MS analysis, and UV-Vis spectroscopy. The HOMO and LUMO energies of the Ru(II) complex are calculated from cyclic voltammetry data. The hybrid materials are characterized by TGA-MS analysis and EDX mapping. The optical properties of hybrids are studied by UV-Vis spectroscopy in the diffuse reflection mode. The investigation of spectral dependencies of photoconductivity of hybrid samples demonstrates that the role of organic dye consists in shifting the photosensitivity range towards longer wavelengths. Sensor measurements demonstrate that hybrid materials are able to detect NO2 in the concentration range of 0.25–2 ppm without the use of thermal heating under periodic illumination with even low-energy long-wavelength (red) light.

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“…При прекращении освещения образцов УФизлучением значение проводимости в течение долгого времени не возвращается к своему первоначальному значению (т. е. у образцов наблюдается остаточная фотопроводимость). Данный факт является достаточно хорошо известным для нанокристаллических оксидов металлов [21][22][23][24]. Объяснение этого процесса связано с адсорбцией и десорбцией кислорода на поверхности оксида.…”

Section: экспериментальные результатыunclassified

Электрические Свойства Тонких Пленок Оксида Индия, Полученных Методом Плазменно-Термического Испарения

Ильин¹,

Мацукатова²,

Форш³

et al. 2018

Физика И Техника Полупроводников

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Исследованы структура и электрические свойства прозрачных тонких пленок оксида индия, полученных методом плазменно-термического испарения при различных температурах подложки. Определено, что пленки имеют зернистую структуру. Увеличение температуры подложки приводит к значительному росту проводимости пленок и к уменьшению времени релаксации фотопроводимости. Предложено объяснение влияния температуры подожки на наблюдаемые изменения электрических и фотоэлектрических свойств исследованных пленок оксида индия.

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Optical and photoelectrical properties of nanocrystalline indium oxide with small grains

Cited by 35 publications

References 26 publications

Green light activated hydrogen sensing of nanocrystalline composite ZnO-In2O3 films at room temperature

Green light activated hydrogen sensing of nanocrystalline composite ZnO-In2O3 films at room temperature

Photosensitive Organic-Inorganic Hybrid Materials for Room Temperature Gas Sensor Applications

Электрические Свойства Тонких Пленок Оксида Индия, Полученных Методом Плазменно-Термического Испарения

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