Optical and photodetector properties of stripe-like InS crystal

Abstract

Structural, optical and photodetector properties of InS stripe-like crystals have been clearly demonstrated.

Recent Progress in 2D Layered III–VI Semiconductors and their Heterostructures for Optoelectronic Device Applications

“…Besides InSe, ultrathin layered InS is another typical 2D indium monochalcogenides, which has been studied insufficiently from both physical properties and device applications . In general, the stable phase of InS possesses an orthorhombic structure assembled in a network architecture, which exhibits the optical indirect bandgap of around 1.78 eV, making it a potential candidate for photonic and optoelectronic devices ranging from red light to NIR region.…”

“…In general, the stable phase of InS possesses an orthorhombic structure assembled in a network architecture, which exhibits the optical indirect bandgap of around 1.78 eV, making it a potential candidate for photonic and optoelectronic devices ranging from red light to NIR region. Recent work demonstrated a photometal–semiconductor–field‐effect transistor (Photo‐MESFET) based on strip‐like InS nanosheets (inset image of Figure a) . The photoconductivity measurement was carried out under illumination of either a tungsten halogen (W) lamp or a white‐light LED.…”

Near-Infrared Optical Modulation for Ultrashort Pulse Generation Employing Indium Monosulfide (InS) Two-Dimensional Semiconductor Nanocrystals

“…Starting from the enthusiastic study of graphene, various kinds of materials, such as carbon nanotubes (CNT) [12,13,14,15], transition metal dichalcogenides (TMDs) [16,17,18,19,20,21], topological insulators (TIs) [22,23,24,25,26], and black phosphorus (BP) [27,28,29,30,31], have been employed as SAs and have successfully demonstrated pulse laser operation from visible to mid-infrared optical regions. Recently, III–VI group compounds (MX; M = Ga, In; X = Te, Se, S) have also gained widespread attention and have been applied in the areas of optoelectronic devices, nonlinear optics, ultrafast laser, and terahertz generation due to their large nonlinear effect, high damage threshold, dramatic photo-response and suitable band-gap [32,33,34,35,36,37,38,39,40,41,42,43,44,45]. For example, in 2018, Xu et al presented a mode-locked laser in the 1 μm region based on InSe as a SA [36].…”

“…InS has been reported to exist in two different crystalline phases—layered and network structural forms—which are connected by fundamental S–In–In–S units [45]. There have also been several studies concerning the optical and electrical properties of InS [41,42,43,44]. The direct and indirect band-gaps of InS are 2.4 eV and 1.9 eV at room temperature, respectively [41,42], which render the InS crystal more sensitive to near-infrared wavelengths than visible wavelengths.…”

“…In 2016, Ho et al experimentally generated single crystals of InS micro stripe, which were grown through a physical vapor transport method. Based on these stripe-like InS crystals, a prototype photo-metal-semiconductor field effect transistor (FET) was successfully constructed [44]. However, the nonlinear saturable absorption properties of InS have rarely been explored and are absent from the literature at this stage of research, to the best of our knowledge.…”