Optical and microstructural properties of hafnium dioxide thin films

Lehan, John P.; Mao, Yan; Bovard, Bertrand G.; Macleod, H. A.

doi:10.1016/0040-6090(91)90131-g

Cited by 98 publications

(45 citation statements)

References 23 publications

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“…9 HfO 2 -based dielectrics have been extensively evaluated and various deposition techniques were demonstrated to be capable of depositing HfO 2 , including physical vapor deposition, 10 chemical vapor deposition, 11,12 and atomic layer deposition (ALD) 13,14 techniques. In these techniques, the resulting films though electrically stable might be optically inhomogeneous (nonsharp optical absorption) due to low kinetic energy (E $ 0.1 eV) 15 of the depositing atoms arriving at the substrate surface. However, the plasma-assisted processes such as pulsed laser deposition (PLD) and the reactive sputtering 16 techniques have advantages over these techniques in providing higher kinetic energy to the species.…”

Section: Introductionmentioning

confidence: 99%

Low Leakage Current Transport and High Breakdown Strength of Pulsed Laser Deposited HfO2/SiC Metal-Insulator-Semiconductor Device Structures

Hullavarad

Pugel

Jones

et al. 2007

Journal of Elec Materi

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Hafnium oxide (HfO 2 ) thin films were deposited by the pulsed laser deposition (PLD) method on SiC substrates. The bandgap of HfO 2 thin films was observed to be 5.8 eV. The chemical nature and stoichiometry of the films were analyzed by x-ray photoelectron spectroscopy (XPS). Metal-insulator-semiconductor (MIS) structures with Ni as a top electrode and TiN as a bottom electrode were fabricated to study the leakage current properties. The devices exhibited leakage current density of 50 nA/cm 2 . The dielectric constant of these films is estimated to be in the range 17-24 from capacitance-voltage (C-V) measurements. The frequency dependence of the interface trapped charges is studied.

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Section: Introductionmentioning

confidence: 99%

Low Leakage Current Transport and High Breakdown Strength of Pulsed Laser Deposited HfO2/SiC Metal-Insulator-Semiconductor Device Structures

Hullavarad

Pugel

Jones

et al. 2007

Journal of Elec Materi

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“…Optical coatings have significantly benefited from the use of ion assist during film deposition. 9 In this work, we also investigate the effect of the argon ion-assist process on the physical and electrical properties of the resulting HfO 2 / SiO x / Si͑100͒ structures, with a particular emphasis on the interfacial SiO x layer thickness between the HfO 2 and the silicon substrate. We will show that the use of an argon ion assist during the film formation results in a thicker IL.…”

Section: Introductionmentioning

confidence: 99%

Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation

Cherkaoui

Monaghan

Negara

et al. 2008

Journal of Applied Physics

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High dielectric constant hafnium oxide films were formed by electron beam ͑e-beam͒ evaporation on HF last terminated silicon ͑100͒ wafers. We report on the influence of low energy argon plasma ͑ϳ70 eV͒ and oxygen flow rate on the electrical, chemical, and structural properties of metal-insulator-silicon structures incorporating these e-beam deposited HfO 2 films. The use of the film-densifying low energy argon plasma during the deposition results in an increase in the equivalent oxide thickness ͑EOT͒ values. We employ high resolution transmission electron microscopy ͑HRTEM͒, x-ray photoelectron spectroscopy ͑XPS͒, and medium energy ion scattering experiments to investigate and understand the mechanisms leading to the EOT increase. We demonstrate very good agreement between the interfacial silicon oxide thicknesses derived independently from XPS and HRTEM measurements. We find that the e-beam evaporation technique enabled us to control the SiO x interfacial layer thickness down to ϳ6 Å. Very low leakage current density ͑Ͻ10 −4 A / cm 2 ͒ is measured at flatband voltage +1 V into accumulation for an estimated EOT of 10.9Ϯ 0.1 Å. Based on a combined HRTEM and capacitance-voltage ͑CV͒ analysis, employing a quantum-mechanical CV fitting procedure, we determine the dielectric constant ͑k͒ of HfO 2 films, and associated interfacial SiO x layers, formed under various processing conditions. The k values are found to be 21.2 for HfO 2 and 6.3 for the thinnest ͑ϳ6 Å͒ SiO x interfacial layer. The cross-wafer variations in the physical and electrical properties of the HfO 2 films are presented.

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“…This is in excellent agreement with published data for HfO 2 films. 19,21,22,25 The crystal structure of HfO 2 thin film, deposited on silicon (100) single crystal wafer, is represented by XRD data shown in figure-1, where the dashed vertical lines represent the characteristic peaks for the HfO 2 monoclinic phase. 26 The film is polycrystalline and the Scherrer equation provides 8-10 nm for the average grain size in the film.…”

Section: -2mentioning

confidence: 99%

“…In comparison to the Si 3 N 4 dielectric, [13][14][15][16][17] hafnium dioxide offers several attractive properties. For example, HfO 2 is characterized with 4-6 times higher dielectric constant, optical transparency over much wider range of wavelengths (250-2000 nm), 3 times higher density in the solid state, chemical stability, and very high melting point 2758 0 C. [18][19][20][21][22] The high dielectric constant and good optical transparency over wider wavelength range are useful for high sensitivity waveguide coupled bimetallic (WCBM) sensors working in VIS-IR range. The surface plasmon polaritons are characterized by a wavevector…”

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confidence: 99%

Hafnium dioxide as a dielectric for highly-sensitive waveguide-coupled surface plasmon resonance sensors

Tiwari

Sharma

Hozhabri³

2016

AIP Advances

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Hafnium dioxide has been recognized as an excellent dielectric for microelectronics. However, its usefulness for the surface plasmon based sensors has not yet been tested. Here we investigate its usefulness for waveguide-coupled bi-metallic surface plasmon resonance sensors. Several Ag/HfO2/Au multilayer structure sensors were fabricated and evaluated by optical measurements and computer simulations. The resulting data establish correlations between the growth parameters and sensor performance. The sensor sensitivity to refractive index of analytes is determined to be Sn=∂θSPR∂n≥470. The sensitivity data are supported by simulations, which also predict 314 nm for the evanescent field decay length in air.

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Optical and microstructural properties of hafnium dioxide thin films

Cited by 98 publications

References 23 publications

Low Leakage Current Transport and High Breakdown Strength of Pulsed Laser Deposited HfO2/SiC Metal-Insulator-Semiconductor Device Structures

Low Leakage Current Transport and High Breakdown Strength of Pulsed Laser Deposited HfO2/SiC Metal-Insulator-Semiconductor Device Structures

Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation

Hafnium dioxide as a dielectric for highly-sensitive waveguide-coupled surface plasmon resonance sensors

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