Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation

Cherkaoui, Karim; Monaghan, Scott; Negara, Muhammad Adi; Modreanu, M.; Hurley, Paul K.; O’Connell, Dan; McDonnell, Stephen; Hughes, Gregory; Wright, Sandra; Barklie, R.C.; Bailey, Paul; Noakes, T.C.Q.

doi:10.1063/1.2978209

Cited by 62 publications

(33 citation statements)

References 32 publications

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“…The C ox values are based on oxide thickness values obtained from high-resolution cross-sectional transmission electron microscopy (HR-TEM), taking into account any interfacial oxide layers formed in the MOS structure. The following dielectric constant values were adopted, HfO 2 (21), 28 Al 2 O 3 (8.6), 23 and the native oxide of In 0.53 Ga 0.47 As (9). 29,30 …”

Section: Methodsmentioning

confidence: 99%

An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors

Lin

Gomeniuk

Monaghan

et al. 2013

Journal of Applied Physics

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In this work, we present the results of an investigation into charge trapping in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOS capacitors), which is analysed using the hysteresis exhibited in the capacitance-voltage (C-V) response. The availability of both n and p doped In0.53Ga0.47As epitaxial layers allows the investigation of both hole and electron trapping in the bulk of HfO2 and Al2O3 films formed using atomic layer deposition (ALD). The HfO2/In0.53Ga0.47As and Al2O3/In0.53Ga0.47As MOS capacitors exhibit an almost reversible trapping behaviour, where the density of trapped charge is of a similar level to high-k/In0.53Ga0.47As interface state density, for both electrons and holes in the HfO2 and Al2O3 films. The experimental results demonstrate that the magnitude of the C-V hysteresis increases significantly for samples which have a native oxide layer present between the In0.53Ga0.47As surface and the high-k oxide, suggesting that the charge trapping responsible for the C-V hysteresis is taking place primarily in the interfacial oxide transition layer between the In0.53Ga0.47As and the ALD deposited oxide. Analysis of samples with a range of oxide thickness values also demonstrates that the magnitude of the C-V hysteresis window increases linearly with the increasing oxide thickness, and the corresponding trapped charge density is not a function of the oxide thickness, providing further evidence that the charge trapping is predominantly localised as a line charge and taking place primarily in the interfacial oxide transition layer located between the In0.53Ga0.47As and the high-k oxide. (C) 2013 AIP Publishing LLC

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Section: Methodsmentioning

confidence: 99%

An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors

Lin

Gomeniuk

Monaghan

et al. 2013

Journal of Applied Physics

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“…Most metallic films are prepared by costly vacuum-based deposition processes, such as chemical vapor deposition [2,3], thermal or electron beam evaporation [4], and molecular beam epitaxy [5], which usually require costly and sophisticated equipment with limited throughput.…”

Section: Introductionmentioning

confidence: 99%

Light welding nanoparticles: from metal colloids to free-standing conductive metallic nanoparticle film

Chen

Yang

et al. 2016

Sci. China Mater.

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Bottom-up assembly of nanostructured thin films could offer an alternative low-cost approach to electronic thin films. However, such solution-processed thin films are often plagued by excessive inter-particle resistance and only exhibit limited current delivering capability. Here, we report a novel approach to fabricate highly conductive free-standing metallic thin film, accomplished by combining interfacial self-assembly of nanoparticles (NPs) and a light welding process. We found that light from a xenon lamp can weld adjacent Ag and Au NPs assembled at the water-air interface, forming a highly interconnected, free-standing metallic thin film structure with excellent electrical transport properties. With such a unique structure, the resultant thin metallic films show not only high flexibility and robustness, but also high conductivity comparable to bulk metallic thin films. Our studies offer a low-cost, room-temperature, and solution-processable approach to highly conductive metallic films. It can significantly impact solution-processable electronic and optoelectronic devices.

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“…Therefore, HfO 2 films with the cubic and/or the tetragonal crystal structure are widely used as high-k dielectric layers in field effect transistors. 5 In film form, HfO 2 can be deposited by a variety of techniques, including atomic layer deposition, 6 electron beam evaporation, 7 radio frequency, [8][9][10][11][12] direct current, [13][14][15] pulsed 16 and high pressure 17 magnetron sputtering, molecular beam epitaxy, 18 and pulse laser deposition. 2,3 With all these techniques, growth at room temperature commonly results in the formation of the m-HfO 2 phase 10,12,16,17,19,20 or amorphous films.…”

Section: Introductionmentioning

confidence: 99%

“…2,3 With all these techniques, growth at room temperature commonly results in the formation of the m-HfO 2 phase 10,12,16,17,19,20 or amorphous films. 2,3,[5][6][7][8]13,15 Therefore, considerable research effort has been focused on the room temperature growth of the t-and the c-HfO 2 phases. A number of studies have shown that the alloying of the metal sublattice of HfO 2 by Y ͑Ref.…”

Section: Introductionmentioning

confidence: 99%

On the phase formation of sputtered hafnium oxide and oxynitride films

Sarakinos

Mušić

Mráz

et al. 2010

Journal of Applied Physics

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Hafnium oxynitride films are deposited from a Hf target employing direct current magnetron sputtering in an Ar-O 2 -N 2 atmosphere. It is shown that the presence of N 2 allows for the stabilization of the transition zone between the metallic and the compound sputtering mode enabling deposition of films at well defined conditions of target coverage by varying the O 2 partial pressure. Plasma analysis reveals that this experimental strategy facilitates control over the flux of the O − ions which are generated on the oxidized target surface and accelerated by the negative target potential toward the growing film. An arrangement that enables film growth without O − ion bombardment is also implemented. Moreover, stabilization of the transition sputtering zone and control of the O − ion flux without N 2 addition is achieved employing high power pulsed magnetron sputtering. Structural characterization of the deposited films unambiguously proves that the phase formation of hafnium oxide and hafnium oxynitride films with the crystal structure of HfO 2 is independent from the O − bombardment conditions. Experimental and theoretical data indicate that the presence of vacancies and/or the substitution of O by N atoms in the nonmetal sublattice favor the formation of the cubic and/or the tetragonal HfO 2 crystal structure at the expense of the monoclinic HfO 2 one.

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Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation

Cited by 62 publications

References 32 publications

An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors

An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors

Light welding nanoparticles: from metal colloids to free-standing conductive metallic nanoparticle film

On the phase formation of sputtered hafnium oxide and oxynitride films

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