Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures

Atom probe reveals the structure of InxGa1–xN based quantum wells in three dimensions

“…The two-temperature growth sample, however, emitted in the near ultra-violet (380 nm). Low-temperature PL, reported elsewhere [1] revealed that this third sample emitted with an internal quantum efficiency (IQE) of 67%, the highest yet reported at its emission wavelength.…”

“…Despite this, it is possible to make In x Ga 1-x N based MQW structures that emit with high internal quantum efficiencies (IQE) (e.g. around 67% [1] for emission at 380 nm). Although this seems to imply that further investigation of these structures is unlikely to yield much improvement in performance, such efficiencies are far from universal.…”

Application of Quaternary AlInGaN- Based Alloys for Light Emission Devices

“…The rapid advances in the hetero-epitaxy of the group-III nitrides (Fernández-Garrido et al (2008); Kemper et al (2011); Suihkonen et al (2008)) have facilitated the production of new devices, including blue and UV LEDs and lasers, high temperature and high power electronics, visible-blind photodetectors and field-emitter structures (Hirayama (2005); Hirayama et al (2010); Tschumak et al (2010); Xie et al (2007); Zhu et al (2007)). There has been recent interest in the Al x In 1−x−y Ga y N quaternary alloys due to potential application in UV LEDs and UV-blue laser diodes (LDs) once they present high brightness, high quantum efficiency, high flexibility, long-lifetime, and low power consumption (Fu et al (2011);Hirayama (2005); Kim et al (2003); Knauer et al (2008); Liu et al (2011);Park et al (2008); Zhmakin (2011);Zhu et al (2007)). The availability of the quaternary alloy offers an extra degree of freedom which allows the independent control of the band gap and lattice constant.…”

Growth and characterization of the AlInGaN quaternary protective layer to suppress the thermal damage of InGaN multiple quantum wells

“…The lattice parameter and the band gap of a quaternary system can be independently tuned by controlling the Al and In content [3,4]. The use of the AlInGaN quaternary epilayer can control the lattice strain of the InGaN active layer varying between compressive and tensile strain [5,6]. However, there have been serious problems in obtaining a high-quality AlInGaN layer.…”