“…[1][2][3][4] Furthermore, owing to the higher thermal stability, using AlInGaN as the protection layer is effective to suppress the generation of non-radiative recombination centers in multiple quantum wells (MQWs) caused by thermal damage in the ramp-up process of metalorganic chemical vapor deposition (MOCVD). [5] Accordingly, AlInGaN is an ideal material for minimizing mismatch-induced strain and enhancing band offset in GaN-based heterostructure. [6] At present, most researchers concentrate on the enhanced luminescence efficiency for InGaN-based MQWs with different polarization-matched barriers.…”
A new approach to fabricating high-quality AlInGaN film as a lattice-matched barrier layer in multiple quantum wells (MQWs) is presented. The high-quality AlInGaN film is realized by growing the AlGaN/InGaN short period superlattices through metalorganic chemical vapor deposition, and then being used as a barrier in the MQWs. The crystalline quality of the MQWs with the lattice-matched AlInGaN barrier and that of the conventional InGaN/GaN MQWs are characterized by x-ray diffraction and scanning electron microscopy. The photoluminescence (PL) properties of the InGaN/AlInGaN MQWs are investigated by varying the excitation power density and temperature through comparing with those of the InGaN/GaN MQWs. The integral PL intensity of InGaN/AlInGaN MQWs is over 3 times higher than that of InGaN/GaN MQWs at room temperature under the highest excitation power. Temperature-dependent PL further demonstrates that the internal quantum efficiency of InGaN/AlInGaN MQWs (76.1%) is much higher than that of InGaN/GaN MQWs (21%). The improved luminescence performance of InGaN/AlInGaN MQWs can be attributed to the distinct reduction of the barrier-well lattice mismatch and the strain-induced non-radiative recombination centers.
“…[1][2][3][4] Furthermore, owing to the higher thermal stability, using AlInGaN as the protection layer is effective to suppress the generation of non-radiative recombination centers in multiple quantum wells (MQWs) caused by thermal damage in the ramp-up process of metalorganic chemical vapor deposition (MOCVD). [5] Accordingly, AlInGaN is an ideal material for minimizing mismatch-induced strain and enhancing band offset in GaN-based heterostructure. [6] At present, most researchers concentrate on the enhanced luminescence efficiency for InGaN-based MQWs with different polarization-matched barriers.…”
A new approach to fabricating high-quality AlInGaN film as a lattice-matched barrier layer in multiple quantum wells (MQWs) is presented. The high-quality AlInGaN film is realized by growing the AlGaN/InGaN short period superlattices through metalorganic chemical vapor deposition, and then being used as a barrier in the MQWs. The crystalline quality of the MQWs with the lattice-matched AlInGaN barrier and that of the conventional InGaN/GaN MQWs are characterized by x-ray diffraction and scanning electron microscopy. The photoluminescence (PL) properties of the InGaN/AlInGaN MQWs are investigated by varying the excitation power density and temperature through comparing with those of the InGaN/GaN MQWs. The integral PL intensity of InGaN/AlInGaN MQWs is over 3 times higher than that of InGaN/GaN MQWs at room temperature under the highest excitation power. Temperature-dependent PL further demonstrates that the internal quantum efficiency of InGaN/AlInGaN MQWs (76.1%) is much higher than that of InGaN/GaN MQWs (21%). The improved luminescence performance of InGaN/AlInGaN MQWs can be attributed to the distinct reduction of the barrier-well lattice mismatch and the strain-induced non-radiative recombination centers.
“…Although room-temperature ZT values of In 0:1 Ga 0:9 N:(Er+Si) and Al 0:1 In 0:1 Ga 0:8 N:(Er+Si) are similar, we preferred Al 0:1 In 0:1 -Ga 0:8 N:(Er+Si) alloys because, for the same In content, AlInGaN alloys have been found more thermally stable than InGaN alloys at high temperature. 23) The Seebeck coefficient S and electrical conductivity of an optimized quaternary alloy, Al 0:1 In 0:1 Ga 0:8 N:(Er+Si), were measured simultaneously from room temperature to about 1055 K. As shown in Fig. 3, as temperature was increased from room temperature to 1055 K, S value was increased from 124 to 193 V/K but decreased from 200 to 135 (Ácm) À1 .…”
mentioning
confidence: 98%
“…However, thermal stability of AlInGaN at high temperature is better than that of InGaN. 23) We have checked the thermal stability of AlInGaN epilayers deposited on GaN/AlN/sapphire templates by measuring the structural and electronic transport properties before and after annealing the epilayers at 1010 K in air for 3 h. It was found that AlInGaN epilayers with In-contents above 0.3 partially decomposed, while those with In-contents below 0.2 retain their original properties after annealing. Thus, we limit the In-content to 10% for TE properties study.…”
The potential of Er-doped Al x In 0:1 Ga 0:9Àx N quaternary alloys as high-temperature thermoelectric (TE) materials has been explored. It was found that the incorporation of Er significantly decreased the thermal conductivity () of Al x In 0:1 Ga 0:9Àx N alloys. The temperature-dependent TE properties were measured up to 1055 K for an Er and Si co-doped n-type Al 0:1 In 0:1 Ga 0:8 N alloy. The figure of merit (ZT ) showed a linear increase with temperature and a value of about 0.3 at 1055 K was estimated. The ability to survive such high temperature with reasonable TE properties suggests that low-In-content Er and Si-doped AlInGaN alloys are potential candidate of high-temperature TE materials.
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