Erbium-Doped AlInGaN Alloys as High-Temperature Thermoelectric Materials

Pantha, B. N.; Feng, I. W.; Aryal, K. R.; Li, Jing; Lin, J. Y.; Jiang, Hongxing

doi:10.1143/apex.4.051001

Cited by 33 publications

(17 citation statements)

References 25 publications

(52 reference statements)

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“…Additionally, GaN is non-toxic, an important consideration for distributed applications such as automobile waste heat recovery. 8 The potential of III-nitride materials for thermoelectric applications has motivated increasing research on the experimental properties of GaN, 9,10 InGaN, 3,5,11,12 InAlN, [13][14][15] and AlInGaN 16,17 as well as III-nitride based thermoelectric devices. 18 There have also been a few attempts to calculate and predict the properties of these materials, most notably the thermoelectric properties of GaN, 4 AlGaN, 4,19 and InGaN.…”

Section: Introductionmentioning

confidence: 99%

Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN

Sztein

Haberstroh

Bowers

et al. 2013

Journal of Applied Physics

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The thermoelectric properties of III-nitride materials are of interest due to their potential use for high temperature power generation applications and the increasing commercial importance of the material system; however, the very large parameter space of different alloy compositions, carrier densities, and range of operating temperatures makes a complete experimental exploration of this material system difficult. In order to predict thermoelectric performances and identify the most promising compositions and carrier densities, the thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN are modeled. The Boltzmann transport equation is used to calculate the Seebeck coefficient, electrical conductivity, and the electron component of thermal conductivity. Scattering mechanisms considered for electronic properties include ionized impurity, alloy potential, polar optical phonon, deformation potential, piezoelectric, and charged dislocation scattering. The Callaway model is used to calculate the phonon component of thermal conductivity with Normal, Umklapp, mass defect, and dislocation scattering mechanisms included. Thermal and electrical results are combined to calculate ZT values. InxGa1−xN is identified as the most promising of the three ternary alloys investigated, with a calculated ZT of 0.85 at 1200 K for In0.1Ga0.9N at an optimized carrier density. AlxGa1−xN is predicted to have a ZT of 0.57 at 1200 K under optimized composition and carrier density. InxAl1−xN is predicted to have a ZT of 0.33 at 1200 K at optimized composition and carrier density. Calculated Seebeck coefficients, electrical conductivities, thermal conductivities, and ZTs are compared with experimental data where such data are available.

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Section: Introductionmentioning

confidence: 99%

Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN

Sztein

Haberstroh

Bowers

et al. 2013

Journal of Applied Physics

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“…GaN-and ZnO-based wide bandgap materials have shown superior electrical and mechanical performance at high temperatures, high density-of-states (DOS)-mobility products, which lead to high power factors. Therefore, these materials are widely used in commercial applications including solid-state lighting, solar cells, transistors, laser diodes, and gas sensors [14][15][16][17][20][21][22][23][24]. In previous studies numerous groups have studied TE properties of III-Nitrides and its alloys and ZnO materials (ceramic and powder) [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][20][21][22][23][24].…”

mentioning

confidence: 99%

Comparison of thermoelectric properties of GaN and ZnO samples

Küçükgök

Wang

Melton

et al. 2014

Phys. Status Solidi C

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In this paper, room temperature thermoelectric (TE) properties of wide bandgap thin film GaN and bulk ZnO are studied. Bulk GaN is also incorporated with epitaxy films to make comparison. GaN and ZnO materials have superior electrical performance and chemical stability at high temperatures and are currently found in many commercial applications, such as, photovoltaic, solid‐state lighting, and gas sensors. Since there are not many semiconductor materials that can operate effectively at high temperatures, wide bandgap materials like GaN and ZnO would be a promising solution for high temperatures thermoelectric power generation. In order to understand their TE properties, we systematically compared and characterized TE behaviour of GaN and ZnO thin films with a function of doping concentrations. The common trend of a decrease in Seebeck coefficients with the increase of carrier concentration for thin film and bulk GaN is observed, however, reverse TE trend for bulk ZnO, were observed. The most commonly observed TE trend is attributed to Mott‐Jones relation to simple transport models while inverse trend could be suggested as hopping conductance. Moreover, the Seebeck coefficients of ZnO samples are found to be larger than those of thin film and bulk GaN samples in the similar carrier density. Highest power factors, 2.6×10–4 W/mK2and 0.65×10–4 W/mK2, and Seebeck coefficients, 478 µV/K and 481 μV/K were measured for thin film GaN and bulk ZnO, respectively. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The technological advances in III-Nitride LEDs encompass approaches for achieving improvement in internal quantum efficiency [5]- [12], reduction in efficiency droop [13], [14], reduction in dislocation density in LEDs [15]- [17], and improvement in photon extraction methods from LED chips [18]- [20]. Recent works had also reported the large thermoelectric figure of merits for III-Nitride based alloys [21]- [23], which indicate the possibility of integrated thermoelectric solid state cooling in high power III-Nitride LEDs. The significant progress in the field of III-Nitride LEDs leads to the importance of low-cost and reliable wafer bonding and laser lift-off (LLO) method as discussed in this work [24]- [27].…”

Section: Introductionmentioning

confidence: 99%

A Stress Analysis of Transferred Thin-GaN Light-Emitting Diodes Fabricated by Au-Si Wafer Bonding

Lin

et al. 2013

J. Display Technol.

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Thin-GaN light-emitting diodes were fabricated by Au-Si wafer bonding and laser lift-off. The relaxation process of the thermal strain in the transferred GaN films on a Si substrate was studied by varying the bonding film thickness of the Au over a wide range from 7 m to 40 m. The transferred GaN films were found to be strained by the biaxial compressive stress. A 10 m Au bonding layer thickness was proven to have the lowest residual compressive stress, and the complete compressive stress variation throughout the entire thin-GaN fabrication process is discussed. Finally, we changed the biaxial in-plane stress of the transferred GaN thin film by controlling the bonding conditions, including the bonding layer thickness and the bonding temperature.

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Erbium-Doped AlInGaN Alloys as High-Temperature Thermoelectric Materials

Cited by 33 publications

References 25 publications

Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN

Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN

Comparison of thermoelectric properties of GaN and ZnO samples

A Stress Analysis of Transferred Thin-GaN Light-Emitting Diodes Fabricated by Au-Si Wafer Bonding

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