Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN

Sztein, Alexander; Haberstroh, John; Bowers, John E.; DenBaars, Steven P.; Nakamura, Shuji

doi:10.1063/1.4804174

Cited by 68 publications

(35 citation statements)

References 47 publications

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“…Most studies on Al x Ga 1-x N investigate the effect of the mass fraction of aluminum, x, or the carrier density on the TE properties and their associated ZT value. 110,111 The results show that the higher mass fractions of Al often result in lower thermal conductivities, and thermal conductivity decreases with the increase of temperature due to increased phonon scattering. A recent study has explored a way to modify the ZT value for Al 0.2 Ga 0.8 N by achieving high electrical conductivity and low thermal conductivity.…”

Section: The Iii-nitrides For Thermoelectric Energy Harvestingmentioning

confidence: 99%

Review—The Current and Emerging Applications of the III-Nitrides

Zhou

Ghods

Saravade

et al. 2017

ECS J. Solid State Sci. Technol.

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III-Nitrides are attracting considerable attention as promising materials for a wide variety of applications due to their wide coverage of direct bandgap range, high electron mobility, high thermal stability and many other exceptional properties. The light-emitting diodes based on III-Nitrides revolutionize the solid-state lighting industry. III-Nitrides based solar cells and thermoelectric generators support the sustainable energy progress, and the III-Nitrides are better alternatives for power and radio frequency (RF) electronics compared with silicon. The doped III-Nitrides' magnetic properties and sensitivity to radiation can contribute to novel spintronic and nuclear detection devices. This paper will review III-nitride material properties and their corresponding applications in LEDs, solar cells, power and radio frequency (RF) electronics, magnetic devices, thermoelectrics and nuclear detection. The typical values of electrical, optical, thermoelectric, magnetic properties are cited, the current state of art investigations are reported, and the future applications are estimated. The III-Nitrides, typically composed of GaN and its alloys with Al and In, are compound semiconductor materials with superior properties and well developed growth techniques 1 that has enabled their use in a board range of applications. The III-Nitrides have a hexagonal wurtzite structure and a continuous alloy system with tunable direct bandgaps from 6.2 eV (AlN) through 3.4 eV (GaN) to 0.7 eV (InN) 2 ( Figure 1). This wide coverage of direct bandgap range from deepultraviolet (UV) to infrared region promises a variety of applications in optoelectronics, such as light-emitting diodes (LEDs), lasers, photodetectors and solar cells. GaN is recognized with high breakdown field, high thermal conductivity, and high electron mobility, making GaN an excellent candidate for high power and RF electronic devices. III-Nitrides exhibit high Seebeck coefficient and excellent temperature stability for high temperature thermoelectric applications. Doped GaN exhibit other unique properties with associated applications; such as transition and rare-earth metals doped GaN with magnetic properties, and indium (In)/gadolinium (Gd)/boron (B)/and lithium (Li) doped GaN for nuclear detection. The ability to access such a wide spectral region and these numerous applications has traditionally required the use of many different III-V materials and complex device structures before the advent of the III-Nitrides. [3][4][5][6][7][8][9] This paper will review various applications of III-Nitrides in including LEDs, solar cells, power and RF electronics, magnetic properties, thermoelectrics and nuclear detection applications, along with their development history, current state of art and future explorations. The III-Nitrides for Light-Emitting DiodesLight-Emitting Diodes are a type of solid state lighting (SSL) source with compact size, high energy efficiency and long lifetime. High brightness LEDs have various application in traffic lights, automobile brake ligh...

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Section: The Iii-nitrides For Thermoelectric Energy Harvestingmentioning

confidence: 99%

Review—The Current and Emerging Applications of the III-Nitrides

Zhou

Ghods

Saravade

et al. 2017

ECS J. Solid State Sci. Technol.

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“…Thus, the electronic contribution to thermal conductivity can be neglected and for a semiconductor k = k ph . According to Callaway model, 8,32,35 thermal conductivity of GaN can be calculated by k ph = k 1 + k 2 .…”

Section: Thermal Conductivitymentioning

confidence: 99%

Built-in-polarization field effect on intrinsic and extrinsic thermal conductivities of AlN/GaN/AlN quantum well

Pansari

Gedam

Sahoo

2015

Int. J. Mod. Phys. B

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In this paper, the effect of built-in-polarization field on lattice thermal conductivity of AlN/GaN/AlN quantum well (QW) has been theoretically investigated. The built-inpolarization field at the hetero-interface of GaN/AlN modifies elastic constant, phonon velocity and Debye temperature of GaN QW. The relaxation time of acoustic phonons (AP) in various scattering processes in GaN with and without built-in-polarization field has been computed at room temperature. The result shows that combined relaxation time of AP is enhanced by built-in-polarization field and implies a longer mean free path. The revised intrinsic and extrinsic thermal conductivities of GaN have been estimated. The theoretical analysis shows that up to a certain temperature the polarization field acts as negative effect and reduces the thermal conductivities. However, after this temperature both thermal conductivities are significantly contributed by polarization field. This gives the idea of temperature dependence of polarization effect which signifies the pyro-electric character of GaN. The intrinsic thermal conductivity at room temperature for with and without polarization mechanism is found to be 491 Wm −1 K −1 and 409 Wm −1 K −1 , respectively i.e., 20% enhancement. However, the extrinsic thermal conductivity at room temperature for with and without polarization mechanism is found to be 280 Wm −1 K −1 and 245 Wm −1 K −1 , respectively i.e., 13% enhancement. The method we have developed may be taken into account during the simulation of heat transport in optoelectronic nitride devices to minimize the self-heating processes and in polarization engineering strategies to optimize the thermoelectric performance of GaN alloys.

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“…Thus, the electronic contribution to thermal conductivity can be neglected and for a semiconductor k = k ph . According to Callaway model [29,37,39], thermal conductivity of InN can be calculated by …”

Section: Thermal Conductivitymentioning

confidence: 99%

“…The Gruneisen parameter c is not a constant, which depends on axis. Different authors have chosen its value differently [10,29,43]. In this work, we have chosen an average value c = 0.6.…”

Section: Thermal Conductivitymentioning

confidence: 99%

“…In their report, they have studied built-inpolarization field effect on electron transport only and have calculated electrical properties of alloys. However, the builtin-polarization field effect on phonon transport properties has not been discussed [29]. A detailed theoretical study of the thermal properties of InN taking into account the builtin-polarization field would be of great help to determine the possible ways for improvement of thermoelectric figure of merit (ZT) and minimization of self-heating effects [30][31][32].…”

Section: Introductionmentioning

confidence: 99%

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Effect of built-in-polarization field on intrinsic and extrinsic thermal conductivity of InN

2015

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The effect of built-in-polarization field on intrinsic and extrinsic lattice thermal conductivity of InN has been investigated theoretically. The built-in-polarization field modifies elastic constant, phonon velocity and Debye temperature of InN. Using these modified parameters, the relaxation time of phonons in various scattering processes at room temperature has been computed as a function of phonon frequency for with and without built-in-polarization field. The result shows that built-in-polarization field enhances the relaxation time of phonons. This implies longer mean free path of phonons. The Callaway model of phonon thermal conductivity has been used to estimate the effect of built-in-polarization field on intrinsic and extrinsic thermal conductivity of InN. The theoretical analysis shows that up to a certain temperature, the polarization field acts as negative effect and reduces the intrinsic and extrinsic thermal conductivity. However, after this temperature, both thermal conductivity are significantly contributed by polarization field. This gives the idea of temperature dependence of polarization effect, which signifies pyro-electric character of InN. The intrinsic thermal conductivity of InN at room temperature including built-in-polarization field is found to be enhanced by 28 %. However, at room temperature, the extrinsic thermal conductivity with built-in-polarization mechanism is found to be enhanced by 15 %. The method, we have developed may be taken in the simulation of heat transport in optoelectronic nitride devices to minimize the self-heating processes and in polarization engineering strategies to optimize the thermoelectric performance of InN alloys.

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Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN

Cited by 68 publications

References 47 publications

Review—The Current and Emerging Applications of the III-Nitrides

Review—The Current and Emerging Applications of the III-Nitrides

Built-in-polarization field effect on intrinsic and extrinsic thermal conductivities of AlN/GaN/AlN quantum well

Effect of built-in-polarization field on intrinsic and extrinsic thermal conductivity of InN

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