Optical and electrical investigation of boron-doped homoepitaxial diamond

Ogasawara, A.; Inushima, Takashi; Shiraishi, Taizo; Ohya, Seishiro; Karasawa, Shiro; Shiomi, Hiroya

doi:10.1016/s0925-9635(96)00722-4

Cited by 14 publications

(8 citation statements)

References 8 publications

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“…IV, the Fermi level of 5000 ppm diamond is almost the same as E T of 500 ppm diamond, suggesting that the interaction energy is negligible. Moreover, it is difficult to observe activation energy ⑀ 2 in the temperature dependence of the conductivity, 14 indicating that the trap level caused by A + states does not exist.…”

Section: Resultsmentioning

confidence: 99%

“…2 In diamond, the change from ⑀ 1 to ⑀ 2 is not observed, 8,9,14 though it is obvious that there is a temperature region which shows two-band conduction. 7,9,15 Homoepitaxial diamond growth technique provides us with samples with a smooth and clean interface so that we can fabricate thin diamond layers with an accurate impurity concentration with few trapping states at the interface.…”

Section: Introductionmentioning

confidence: 98%

“…The most serious one is the observation of the VRH even at room temperature. [8][9][10]13,14 This causes the critical temperature T 0 ϳ 10 4 K, 10,13 which requires a broad impurity bandwidth of ϳ0.1 eV centered at the ground state of boron, and a short hopping distance of 3.5 Å. These conditions contradict the concept of VRH used in Si and Ge ͑Ref.…”

Section: Introductionmentioning

confidence: 99%

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Impurity band structure of boron-doped homoepitaxial diamond

2009

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Impurity band structure of boron-doped diamond is investigated using p + / p − / p + mesa structures with thin p − layers, where p + is heavily doped diamond with variable range hopping conductivity and p − is less-doped diamond with valence-band conductivity. From the frequency and temperature dependence of the conductivity of the mesa structures, it is found that holes injected into the p − layer stay at the 2p states of boron for an extremely long time and contribute to the conductivity. From the equivalent circuit analysis it is concluded that, when the boron concentration exceeds ϳ4 ϫ 10 18 cm −3 , the 2p wave functions of boron begin to overlap, and an impurity band forms at 2p states, which is located ϳ0.07 eV above the valence-band maximum. Simultaneously, the Fermi level rises to the impurity band by a strong electron-optical phonon interaction and a variable range hopping is realized in this band.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

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Impurity band structure of boron-doped homoepitaxial diamond

2009

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“…If the JFM of diamond and that of Si are compared, JFM diamond /JFM Si = 2601. On the other hand, Keyess figure of merit (KFM) [5] well describes the limit of the high-frequency characteristics due to heat: CCC8756-663X/99/070068- 12 © 1999 Scripta Technica Electronics and Communications in Japan, Part 2, Vol. 82, No.…”

Section: Introductionmentioning

confidence: 99%

“…Also, the activation energy can be reduced from 0.37 eV if the amount of boron dopant is increased. At a high concentration, an impurity band is formed, so that the temperature dependence of the conductivity almost vanishes [12]. Let us consider a device structure in which the high-concentration region becomes the supply source of the carriers and the carriers move with high mobility in the low-concentration region.…”

Section: Introductionmentioning

confidence: 99%

Crystal growth of diamond and its application for semiconductor devices

Shiomi

1999

Electron. Comm. Jpn. Pt. II

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Based on the latest experimental results, the on‐resistance of diamond devices is compared with those of other wide‐bandgap semiconductor devices from the power device point of view. From the dynamic temperature dependence of the on‐resistance, the superiority of the diamond device as a majority carrier device is made clear. The history of diamond transistor development is reviewed in order to show how progress in crystal growth was related to the realization of diamond devices with such superior characteristics. Step flow growth using an off‐orientation substrate is introduced as the latest advance in gas‐phase synthesis of diamond. By means of step flow growth, not only is the surface morphology improved, but the repeatability of doping is increased. Progress in this crystal growth technology offers the possibility of further new devices. © 1999 Scripta Technica, Electron Comm Jpn Pt 2, 82(7):68–79, 1999

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