2009
DOI: 10.1103/physrevb.79.045210
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Impurity band structure of boron-doped homoepitaxial diamond

Abstract: Impurity band structure of boron-doped diamond is investigated using p + / p − / p + mesa structures with thin p − layers, where p + is heavily doped diamond with variable range hopping conductivity and p − is less-doped diamond with valence-band conductivity. From the frequency and temperature dependence of the conductivity of the mesa structures, it is found that holes injected into the p − layer stay at the 2p states of boron for an extremely long time and contribute to the conductivity. From the equivalent… Show more

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Cited by 5 publications
(7 citation statements)
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“…Simultaneously, the Fermi level rises to this impurity band and the relaxation time of the excited holes decreases drastically. 12,13) Takeuchi et al obtained similar results of the impurity band structure with the carrier concentration close to and below N c using a total photoelectron emission yield spectroscopy. 14) This is a remarkable feature of diamond and it is important to understand how the impurity band evolves into solid bands in boron doped diamond.…”
Section: Introductionmentioning
confidence: 72%
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“…Simultaneously, the Fermi level rises to this impurity band and the relaxation time of the excited holes decreases drastically. 12,13) Takeuchi et al obtained similar results of the impurity band structure with the carrier concentration close to and below N c using a total photoelectron emission yield spectroscopy. 14) This is a remarkable feature of diamond and it is important to understand how the impurity band evolves into solid bands in boron doped diamond.…”
Section: Introductionmentioning
confidence: 72%
“…In previous papers we showed how boron impurity evolved from isolated level to an impurity band. 12,13) Now, the first principles calculation shows that the impurity band continues to evolve into the solid valence band through Mott transition. Here, we present an idea of the evolution, schematically shown in Fig.…”
Section: Discussionmentioning
confidence: 99%
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“…The peak at 2460 cm −1 is identified as the first excited‐state transition of the boron dopant, the broad peak observed at ∼2800 cm −1 involves the unresolved second and third excited transitions of the boron acceptor, while the peak at 4125 cm −1 is the one‐phonon‐assisted electronic transitions of excited states displaced by one diamond optical phonon. All boron‐related bands in the samples under study are broader than the corresponding peaks in lightly B‐doped single‐crystal diamonds due to electron‐phonon interaction at the boron sites 22. Quantifying the total neutral boron acceptors, we used an amplitude of 1280 cm −1 one‐phonon band and the integral of the 2800 cm −1 absorption peak.…”
Section: The Investigation Of As‐grown B‐doped Homoepitaxial Diamondmentioning
confidence: 99%