No abstract

No abstract

No abstract

Boron-doped homoepitaxial diamond films are deposited from ethanol/trimethyl borate/hydrogen mixtures activated by microwave (MW) discharge plasma. The high smoothness, uniform distribution of boron atoms located predominantly in substitution positions, and low concentration of the nitrogen-compensating impurity is achieved. C 2 H 5 OH dissociation pathways in MW plasma-activated (PA)CVD reactor conditions, and the distribution of C x H y O z concentrations in the hot core of C 2 H 5 OH/H 2 plasma are calculated. It is shown that the methyl radical is as responsible for diamond growth in C 2 H 5 OH/H 2 mixtures as for a conventional CH 4 /H 2 mixture.

Boron doped polycrystalline diamond films were grown using MW PE CVD method. Optical emission spectra (OES) of MW-plasma in the region from 200 nm to 800 nm during boron doped polycrystalline diamond films growth were in situ investigated. Raman spectroscopy method was used for morphology investigation of grown polycrystalline diamond films. Also, absorption spectroscopy method was used for optical properties investigation of all grown films.