Boron‐doped Homoepitaxial Diamond CVD from Microwave Plasma‐Activated Ethanol/Trimethyl Borate/Hydrogen Mixtures

Abstract

Boron-doped homoepitaxial diamond films are deposited from ethanol/trimethyl borate/hydrogen mixtures activated by microwave (MW) discharge plasma. The high smoothness, uniform distribution of boron atoms located predominantly in substitution positions, and low concentration of the nitrogen-compensating impurity is achieved. C 2 H 5 OH dissociation pathways in MW plasma-activated (PA)CVD reactor conditions, and the distribution of C x H y O z concentrations in the hot core of C 2 H 5 OH/H 2 plasma are calculated. It is shown that the methyl radical is as responsible for diamond growth in C 2 H 5 OH/H 2 mixtures as for a conventional CH 4 /H 2 mixture.

Single photon emission from in situ created nitrogen-vacancies in chemical vapor deposition grown single crystal diamond

“…The nitrogen impurities in the form of C-centres at 1130 cm −1 and 1344 cm −1 in one-phonon region were not detected in our samples, which indicate that the nitrogen concentration is less than ∼10 ppm in the samples [15]. The peaks in two-phonon region (∼2700-1500 cm −1 ) are intrinsic to pure diamond, whereas a broad peak at ∼2460 cm −1 corresponds to the first excited state transition of boron dopant [16]. The peak at ∼2801 cm −1 and ∼2923 cm −1 are associated with the unresolved second and third excited transitions of the boron acceptor, respectively.…”

Formation mechanisms of boron oxide films fabricated by large-area electron beam-induced deposition of trimethyl borate

“…TMB is an alkoxide-based molecule with structural properties similar to those of tetraethyl orthosilicate (TEOS, Si(C 2 H 5 O) 4 ), which has been well characterized as a precursor for EBID of silica films [ 14 ]. TMB has previously been used for boron doping of SiO 2 [ 15 ] and diamond [ 16 ], and the deposition of BCN fibres [ 17 ], BN nanotubes [ 18 ] and BN thin films [ 19 – 20 ]. Thin films were prepared using a novel, large-area deposition system designed for the directed deposition of macroscopic features using the EBID process.…”