Cathodoluminescence of highly and heavily boron doped (100) homoepitaxial diamond films

Baron, C.; Wade, Mamadou; Deneuville, A.; Jomard, François; Chevallier, J.

doi:10.1016/j.diamond.2006.01.015

Cited by 30 publications

(6 citation statements)

References 26 publications

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“…However, the BETO emission peak is strongly shifted towards low energies with a large broadening which corresponds to a decrease of the bandgap energy. This is consistent with a very high boron doping level [29] which is not surprising since the incorporation efficiency of dopants is known to be much higher on (111). Taking into account the boron doping measured by SIMS, an incorporation efficiency of almost 90% can be estimated which is almost 2 orders of magnitude higher than that obtained on (100) orientation in our growth conditions [30].…”

Section: Resultssupporting

confidence: 81%

Thick heavily boron doped CVD diamond films homoepitaxially grown on (111)-oriented substrates

Boussadi

Tallaire

Brinza

et al. 2017

Diamond and Related Materials

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Section: Resultssupporting

confidence: 81%

Thick heavily boron doped CVD diamond films homoepitaxially grown on (111)-oriented substrates

Boussadi

Tallaire

Brinza

et al. 2017

Diamond and Related Materials

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“…The impurity band model has been argued to be the appropriate explanation for cathodoluminescence spectra [61,62], whereas X-ray angle-resolved photoemission spectroscopy appears to reveal a Fermi-level lying below the host valence band top [63]. Much of the computational analysis appears to support the latter [51, 64 -68].…”

Section: Substitutional Boronmentioning

confidence: 94%

Theoretical models for doping diamond for semiconductor applications

Goss

Eyre

Briddon

2008

Physica Status Solidi (b)

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Diamond is a material with superlative properties in terms of carrier mobilities and device characteristics for high power electronics applications. Although p‐type diamond is routinely available using boron, n‐type material via impurity doping during the growth of diamond has historically been limited in success, partly because nitrogen is a hyper‐deep donor, but compounded by the compact lattice leading to low solubilities for alternative species. Implantation doping is often hampered by persistent residual damage leading to significant levels of compensation and the formation of dopant complexes with lattice vacancies. Experiment has been augmented by the application of quantum‐chemical methods to assess the likely properties should specific impurities or impurity complexes be realisable in real materials. The review outlines many of the doping strategies explored for diamond, including simple impurity doping and co‐doping. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The reason for this is believed to be due to a band gap shrinkage. This shift can then be used to derive the B content 40. However, in this analysis a contribution of stress to the peak shift has to be taken into account, since stress alone shifts the exciton‐related peaks by ∼0.01 eV per GPa, as shown in Fig.…”

Section: Analysis Of B‐doped Heteroepitaxial Diamond Filmsmentioning

confidence: 99%

In situ boron doping during heteroepitaxial growth of diamond on Ir/YSZ/Si

Sartori

Fischer

Gsell

et al. 2012

Physica Status Solidi (a)

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In situ boron doping of heteroepitaxial diamond films grown by microwave plasma chemical vapor deposition on Ir/YSZ/Si (001) is investigated. The study comprises the analysis of the gas phase by optical emission spectroscopy (OES) and measurements of B doped films by secondary ion mass spectroscopy (SIMS), cathodoluminescence (CL), and X-ray diffraction (XRD). The OE intensity of BH species scales linearly with the concentration of the boron precursor trimethylboron (TMB) in the feed gas. Addition of CO 2 as an oxygen source causes a proportional reduction of the BH signal. At a ratio C:O ¼ 1, a reduction factor of $50 is obtained. It is shown for two diamond samples that the boron incorporation drops nearly identical to the BH emission intensity. We conclude that the influence of oxygen on boron incorporation is a pure gas phase effect. In contrast, CN and BH emission indicate a negligible interaction between N 2 and TMB added to the feed gas. At the same time, preliminary growth rate measurements show that the boron background pressure in the chamber after growth with TMB completely cancels the growth acceleration by nitrogen up to N 2 concentrations of 100 ppm which points to the dominance of surface processes. Heteroepitaxial diamond films grown on Ir at 50 mbar between 720 and 900 8C contain high intrinsic stress that varies from À2.2 GPa compressive at the lowest to slightly tensile at the highest deposition temperature. The observed behavior is similar to former work at 200 mbar in which effective climb of dislocations was suggested as responsible mechanism. Addition of boron rather enhances the stress formation than causing a relaxation. The B concentration in the heteroepitaxial films is deduced by SIMS, CL, and XRD and correlated with the TMB concentration in the gas phase.

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Cathodoluminescence of highly and heavily boron doped (100) homoepitaxial diamond films

Cited by 30 publications

References 26 publications

Thick heavily boron doped CVD diamond films homoepitaxially grown on (111)-oriented substrates

Thick heavily boron doped CVD diamond films homoepitaxially grown on (111)-oriented substrates

Theoretical models for doping diamond for semiconductor applications

In situ boron doping during heteroepitaxial growth of diamond on Ir/YSZ/Si

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